DMN6070SSDQ-13
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Diodes Incorporated DMN6070SSDQ-13

Manufacturer No:
DMN6070SSDQ-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN6070SSDQ-13 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 41V~60V SO-8 T&R 2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:2.7A (Ta)
Rds On (Max) @ Id, Vgs:87mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:588pF @ 30V
Power - Max:1.2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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$0.18
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Similar Products

Part Number DMN6070SSDQ-13 DMN6040SSDQ-13   DMN6070SSD-13  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Standard Logic Level Gate
Drain to Source Voltage (Vdss) 60V 60V 60V
Current - Continuous Drain (Id) @ 25°C 2.7A (Ta) 5A (Ta) 3.3A
Rds On (Max) @ Id, Vgs 87mOhm @ 4.5A, 10V 40mOhm @ 4.5A, 10V 80mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.3nC @ 10V 22.4nC @ 10V 12.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 588pF @ 30V 1287pF @ 25V 588pF @ 30V
Power - Max 1.2W (Ta) 1.3W 1.2W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO 8-SO

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