DMN601WKQ-7
  • Share:

Diodes Incorporated DMN601WKQ-7

Manufacturer No:
DMN601WKQ-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN601WKQ-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 300MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

$0.46
433

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN601WKQ-7 DMN601WK-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta) 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 200mW (Ta) 200mW (Ta)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-323
Package / Case SC-70, SOT-323 SC-70, SOT-323

Related Product By Categories

TSM2318CX RFG
TSM2318CX RFG
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 40V 3.9A SOT23
FCMT299N60
FCMT299N60
onsemi
MOSFET N-CH 600V 12A POWER88
IRFM220BTF
IRFM220BTF
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
FDI8442
FDI8442
Fairchild Semiconductor
MOSFET N-CH 40V 23A/80A I2PAK
SI4866DY-T1-E3
SI4866DY-T1-E3
Vishay Siliconix
MOSFET N-CH 12V 11A 8SO
NVMFS6H858NLT1G
NVMFS6H858NLT1G
onsemi
MOSFET N-CH 80V 8.7A/30A 5DFN
NVD5C446NT4G
NVD5C446NT4G
onsemi
MOSFET N-CHANNEL 40V 101A DPAK
IXTP56N15T
IXTP56N15T
IXYS
MOSFET N-CH 150V 56A TO220AB
IRF3711STRL
IRF3711STRL
Infineon Technologies
MOSFET N-CH 20V 110A D2PAK
SI3455ADV-T1-E3
SI3455ADV-T1-E3
Vishay Siliconix
MOSFET P-CH 30V 2.7A 6TSOP
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
FDY301NZ_G
FDY301NZ_G
onsemi
MOSFET N-CH 20V 200MA SC89-3

Related Product By Brand

GB1200036
GB1200036
Diodes Incorporated
CRYSTAL 12.0000MHZ 30PF TH
FL2500269
FL2500269
Diodes Incorporated
CRYSTAL SURFACE MOUNT
FX1200080
FX1200080
Diodes Incorporated
CRYSTAL 12.0000MHZ 20PF SMD
F92600002
F92600002
Diodes Incorporated
CRYSTAL 26.04166MHZ 18PF
FZT549TA
FZT549TA
Diodes Incorporated
TRANS PNP 30V 1A SOT223-3
DMN3055LFDB-13
DMN3055LFDB-13
Diodes Incorporated
MOSFET 2 N-CH 5A UDFN2020-6
ZVN2106ASTOB
ZVN2106ASTOB
Diodes Incorporated
MOSFET N-CH 60V 450MA E-LINE
PI2DBS212ZHE
PI2DBS212ZHE
Diodes Incorporated
IC MUX/DEMUX 2X2 28TQFN
PI5C16211A
PI5C16211A
Diodes Incorporated
IC BUS SWITCH 12 X 1:1 56TSSOP
AP2301SN-7
AP2301SN-7
Diodes Incorporated
IC PWR SWITCH P-CH 1:1 6DFN2020
AP4341SNTR-G1
AP4341SNTR-G1
Diodes Incorporated
ACDC PSR ACCEL SOT23
TL431BW5-7
TL431BW5-7
Diodes Incorporated
IC VREF SHUNT ADJ 0.5% SOT25