Diodes Incorporated-DMN601WKQ-13 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	-
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	50 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	200mW (Ta)
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-323
Package / Case:	SC-70, SOT-323

Diodes Incorporated DMN601WKQ-13