DMN55D0UTQ-7
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Diodes Incorporated DMN55D0UTQ-7

Manufacturer No:
DMN55D0UTQ-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN55D0UTQ-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 50V 160MA SOT-523
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:160mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4V
Rds On (Max) @ Id, Vgs:4Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:25 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-523
Package / Case:SOT-523
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Similar Products

Part Number DMN55D0UTQ-7 DMN55D0UT-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 160mA (Ta) 160mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V 2.5V, 4V
Rds On (Max) @ Id, Vgs 4Ohm @ 100mA, 4V 4Ohm @ 100mA, 4V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 25 pF @ 10 V 25 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 200mW (Ta) 200mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-523 SOT-523
Package / Case SOT-523 SOT-523

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