DMN53D0LQ-13
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Diodes Incorporated DMN53D0LQ-13

Manufacturer No:
DMN53D0LQ-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN53D0LQ-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 50V 500MA SOT23
Delivery:
Payment:
iso14001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:46 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):370mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number DMN53D0LQ-13 DMN53D0LW-13   DMN53D0L-13  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta) 360mA (Ta) 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V 5V, 10V 2.5V, 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V 2Ohm @ 270mA, 10V 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 100µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V 1.2 nC @ 10 V 0.6 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 46 pF @ 25 V 45.8 pF @ 25 V 46 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 370mW (Ta) 320mW (Ta) 370mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-323 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

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