DMN4800LSSQ-13
  • Share:

Diodes Incorporated DMN4800LSSQ-13

Manufacturer No:
DMN4800LSSQ-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN4800LSSQ-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 8.6A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:14mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.7 nC @ 5 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:798 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.46W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

$0.57
99

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN4800LSSQ-13 DMN4800LSS-13   DMN4800LSSL-13  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 8.6A (Ta) 9A (Ta) 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 9A, 10V 16mOhm @ 9A, 10V 14mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 1.6V @ 250µA 1.6V @ 250µA 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.7 nC @ 5 V 9.47 nC @ 5 V 8.7 nC @ 5 V
Vgs (Max) ±25V ±25V ±20V
Input Capacitance (Ciss) (Max) @ Vds 798 pF @ 10 V 798 pF @ 10 V 798 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 1.46W (Ta) 1.46W (Ta) 1.46W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

IRF740APBF
IRF740APBF
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
BUK7226-75A118
BUK7226-75A118
NXP USA Inc.
N-CHANNEL POWER MOSFET
BUK7620-100A,118
BUK7620-100A,118
NXP Semiconductors
NEXPERIA BUK7620 - TRANSISTOR >3
STF80N10F7
STF80N10F7
STMicroelectronics
MOSFET N-CH 100V 40A TO220FP
IXFK80N50Q3
IXFK80N50Q3
IXYS
MOSFET N-CH 500V 80A TO264AA
PSMN041-80YLX
PSMN041-80YLX
Nexperia USA Inc.
MOSFET N-CH 80V 25A LFPAK56
CSD18536KTTT
CSD18536KTTT
Texas Instruments
MOSFET N-CH 60V 200A/349A DDPAK
IXFR80N50Q3
IXFR80N50Q3
IXYS
MOSFET N-CH 500V 50A ISOPLUS247
PMN48XPAX
PMN48XPAX
Nexperia USA Inc.
MOSFET P-CH 20V 4.1A 6TSOP
IRF6609TR1
IRF6609TR1
Infineon Technologies
MOSFET N-CH 20V 31A DIRECTFET
IPI50R350CP
IPI50R350CP
Infineon Technologies
MOSFET N-CH 550V 10A TO262-3
SSM3J114TU(T5L,T)
SSM3J114TU(T5L,T)
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 1.8A UFM

Related Product By Brand

SD36CQ-7
SD36CQ-7
Diodes Incorporated
GENERAL PROTECTION PP SOD323 T&R
FW2500031Q
FW2500031Q
Diodes Incorporated
CRYSTAL 25.0000MHZ 8PF SMD
FN3330045
FN3330045
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM7050 T&
FKA620006
FKA620006
Diodes Incorporated
XTAL OSC XO 106.2500MHZ CMOS SMD
BAV99-7
BAV99-7
Diodes Incorporated
DIODE ARRAY GP 75V 300MA SOT23-3
B160B-13-F
B160B-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 1A SMB
DMP2021UFDF-7
DMP2021UFDF-7
Diodes Incorporated
MOSFET P-CH 20V 9A 6UDFN
PI3USB102ZLEX
PI3USB102ZLEX
Diodes Incorporated
IC SW USB 2.0 10-TQFN
AP2552AFDC-7
AP2552AFDC-7
Diodes Incorporated
IC PWR SWITCH P-CHANNEL 1:1 6DFN
PT8A3216WE
PT8A3216WE
Diodes Incorporated
HEATER CONTROLLER SO-8
ZR40402N841TA
ZR40402N841TA
Diodes Incorporated
IC VREF SHUNT 2% 8SOP
AP7344D-3028RH4-7
AP7344D-3028RH4-7
Diodes Incorporated
IC REG LIN 2.8V/3V X2DFN1612-8