DMN4800LSSQ-13
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Diodes Incorporated DMN4800LSSQ-13

Manufacturer No:
DMN4800LSSQ-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN4800LSSQ-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 8.6A 8SO
Delivery:
Payment:
iso14001
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iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:14mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.7 nC @ 5 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:798 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.46W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number DMN4800LSSQ-13 DMN4800LSS-13   DMN4800LSSL-13  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 8.6A (Ta) 9A (Ta) 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 9A, 10V 16mOhm @ 9A, 10V 14mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 1.6V @ 250µA 1.6V @ 250µA 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.7 nC @ 5 V 9.47 nC @ 5 V 8.7 nC @ 5 V
Vgs (Max) ±25V ±25V ±20V
Input Capacitance (Ciss) (Max) @ Vds 798 pF @ 10 V 798 pF @ 10 V 798 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 1.46W (Ta) 1.46W (Ta) 1.46W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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