DMN4026SSD-13
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Diodes Incorporated DMN4026SSD-13

Manufacturer No:
DMN4026SSD-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN4026SSD-13 Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 40V 7A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:7A
Rds On (Max) @ Id, Vgs:24mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1060pF @ 20V
Power - Max:1.3W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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In Stock

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Similar Products

Part Number DMN4026SSD-13 DMNH4026SSD-13   DMN4027SSD-13   DMN4026SSDQ-13  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Standard Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 40V - 40V 40V
Current - Continuous Drain (Id) @ 25°C 7A 7.5A (Ta) 5.4A 7A
Rds On (Max) @ Id, Vgs 24mOhm @ 6A, 10V 24mOhm @ 6A, 10V 27mOhm @ 7A, 10V 24mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19.1nC @ 10V 8.8nC @ 4.5V 12.9nC @ 10V 19.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 20V 1060pF @ 20V 604pF @ 20V 1060pF @ 20V
Power - Max 1.3W - 1.8W 1.3W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO 8-SO 8-SO

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