DMN3731UFB4-7B
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Diodes Incorporated DMN3731UFB4-7B

Manufacturer No:
DMN3731UFB4-7B
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN3731UFB4-7B Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 1.2A 3DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:460mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:0.95V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.5 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:73 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):520mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:X2-DFN1006-3
Package / Case:3-XFDFN
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Similar Products

Part Number DMN3731UFB4-7B DMN3730UFB4-7B  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.2A (Ta) 750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 460mOhm @ 200mA, 4.5V 460mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 0.95V @ 250µA 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.5 nC @ 4.5 V 1.6 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 73 pF @ 25 V 64.3 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 520mW (Ta) 470mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package X2-DFN1006-3 X2-DFN1006-3
Package / Case 3-XFDFN 3-XFDFN

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