DMN3730UFB-7
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Diodes Incorporated DMN3730UFB-7

Manufacturer No:
DMN3730UFB-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN3730UFB-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 750MA 3DFN
Delivery:
Payment:
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iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:460mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.6 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:64.3 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):470mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:X1-DFN1006-3
Package / Case:3-UFDFN
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Similar Products

Part Number DMN3730UFB-7 DMN3730UFB4-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 750mA (Ta) 750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 460mOhm @ 200mA, 4.5V 460mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.6 nC @ 4.5 V 1.6 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 64.3 pF @ 25 V 64.3 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 470mW (Ta) 470mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package X1-DFN1006-3 X2-DFN1006-3
Package / Case 3-UFDFN 3-XFDFN

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