DMN33D8LV-7
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Diodes Incorporated DMN33D8LV-7

Manufacturer No:
DMN33D8LV-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN33D8LV-7 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 25V~30V SOT563 T&R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:350mA (Ta)
Rds On (Max) @ Id, Vgs:2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:1.23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:48pF @ 5V
Power - Max:430mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
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Similar Products

Part Number DMN33D8LV-7 DMN63D8LV-7   DMN33D9LV-7  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Logic Level Gate Standard
Drain to Source Voltage (Vdss) 30V 30V 30V
Current - Continuous Drain (Id) @ 25°C 350mA (Ta) 260mA 350mA (Ta)
Rds On (Max) @ Id, Vgs 2.4Ohm @ 250mA, 10V 2.8Ohm @ 250mA, 10V 2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 100µA 1.5V @ 250µA 1.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 1.23nC @ 10V 0.87nC @ 10V 1.23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 48pF @ 5V 22pF @ 25V 48pF @ 5V
Power - Max 430mW (Ta) 450mW 430mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-563 SOT-563 SOT-563

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