DMN33D8LV-7
  • Share:

Diodes Incorporated DMN33D8LV-7

Manufacturer No:
DMN33D8LV-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN33D8LV-7 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 25V~30V SOT563 T&R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:350mA (Ta)
Rds On (Max) @ Id, Vgs:2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:1.23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:48pF @ 5V
Power - Max:430mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
0 Remaining View Similar

In Stock

$0.09
7,720

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN33D8LV-7 DMN63D8LV-7   DMN33D9LV-7  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Logic Level Gate Standard
Drain to Source Voltage (Vdss) 30V 30V 30V
Current - Continuous Drain (Id) @ 25°C 350mA (Ta) 260mA 350mA (Ta)
Rds On (Max) @ Id, Vgs 2.4Ohm @ 250mA, 10V 2.8Ohm @ 250mA, 10V 2.4Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 100µA 1.5V @ 250µA 1.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 1.23nC @ 10V 0.87nC @ 10V 1.23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 48pF @ 5V 22pF @ 25V 48pF @ 5V
Power - Max 430mW (Ta) 450mW 430mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-563 SOT-563 SOT-563

Related Product By Categories

MCH6626-TL-E
MCH6626-TL-E
onsemi
PCH+NCH 2.5V DRIVE SERIES
CPH5616-TL-E
CPH5616-TL-E
Sanyo
N-CHANNEL SILICON MOSFET
SSM6N951L,EFF
SSM6N951L,EFF
Toshiba Semiconductor and Storage
SMALL SIGNAL MOSFET RDSON: 4.4MO
SSM6L40TU,LF
SSM6L40TU,LF
Toshiba Semiconductor and Storage
X34 PB-F UF6 S-MOS (LF) TRANSIST
NTJD4152PT1G
NTJD4152PT1G
onsemi
MOSFET 2P-CH 20V 0.88A SOT-363
FDS4897C
FDS4897C
onsemi
MOSFET N/P-CH 40V 6.2/4.4A 8SOIC
DMC2053UFDB-7
DMC2053UFDB-7
Diodes Incorporated
MOSFET BVDSS: 8V~24V U-DFN2020-6
BSS84DW-7
BSS84DW-7
Diodes Incorporated
MOSFET 2P-CH 50V 0.13A SC70-6
IRF7389PBF
IRF7389PBF
Infineon Technologies
MOSFET N/P-CH 30V 8-SOIC
SI7911DN-T1-E3
SI7911DN-T1-E3
Vishay Siliconix
MOSFET 2P-CH 20V 4.2A 1212-8
AUIRF7342Q
AUIRF7342Q
Infineon Technologies
MOSFET 2P-CH 55V 3.4A 8SOIC
AO4612L
AO4612L
Alpha & Omega Semiconductor Inc.
MOSFET N/P-CH 60V 8SOIC

Related Product By Brand

DM6W22A-13
DM6W22A-13
Diodes Incorporated
TVS DIODE 22VWM 35.5VC DO218
G9327A015
G9327A015
Diodes Incorporated
CRYSTAL PLASTIC SMD2012
SD101AWS-7-F-79
SD101AWS-7-F-79
Diodes Incorporated
DIODE SCHOTTKY 60V 15MA SOD323
PD3Z284C22-7
PD3Z284C22-7
Diodes Incorporated
DIODE ZENER 22V 500MW POWERDI323
DMC2450UV-7
DMC2450UV-7
Diodes Incorporated
MOSFET N/P-CH 20V SOT563
DML1008LDS-7
DML1008LDS-7
Diodes Incorporated
IC PWR SWITCH N-CHAN 1:1 8VDFN
AP4312QK6TR-G1
AP4312QK6TR-G1
Diodes Incorporated
IC VREF SHUNT ADJ SOT26
ZRC330A01STOB
ZRC330A01STOB
Diodes Incorporated
IC VREF SHUNT 1% TO92
AP431AVG-A
AP431AVG-A
Diodes Incorporated
IC VREF SHUNT ADJ 0.5% TO92
AP1501-T5G-U
AP1501-T5G-U
Diodes Incorporated
IC REG BUCK ADJ 3A TO220-5
PAM3101HCA150
PAM3101HCA150
Diodes Incorporated
IC REG LINEAR 1.5V 300MA SOT89-3
AH266Z4-AG1
AH266Z4-AG1
Diodes Incorporated
MAGNETIC SWITCH LATCH TO94