DMN33D8LTQ-7
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Diodes Incorporated DMN33D8LTQ-7

Manufacturer No:
DMN33D8LTQ-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN33D8LTQ-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 115MA SOT523
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4V
Rds On (Max) @ Id, Vgs:5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id:1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:0.55 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:48 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):240mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-523
Package / Case:SOT-523
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Similar Products

Part Number DMN33D8LTQ-7 DMN33D8LT-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta) 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V 2.5V, 4V
Rds On (Max) @ Id, Vgs 5Ohm @ 10mA, 4V 5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.5V @ 100µA 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 0.55 nC @ 10 V 0.55 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 48 pF @ 5 V 48 pF @ 5 V
FET Feature - -
Power Dissipation (Max) 240mW (Ta) 240mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-523 SOT-523
Package / Case SOT-523 SOT-523

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