DMN33D8LT-13
  • Share:

Diodes Incorporated DMN33D8LT-13

Manufacturer No:
DMN33D8LT-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN33D8LT-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 115MA SOT523
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4V
Rds On (Max) @ Id, Vgs:5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id:1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:0.55 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:48 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):240mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-523
Package / Case:SOT-523
0 Remaining View Similar

In Stock

$0.38
1,128

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN33D8LT-13 DMN33D8LTQ-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta) 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V 2.5V, 4V
Rds On (Max) @ Id, Vgs 5Ohm @ 10mA, 4V 5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.5V @ 100µA 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 0.55 nC @ 10 V 0.55 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 48 pF @ 5 V 48 pF @ 5 V
FET Feature - -
Power Dissipation (Max) 240mW (Ta) 240mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-523 SOT-523
Package / Case SOT-523 SOT-523

Related Product By Categories

BSS159NH6906XTSA1
BSS159NH6906XTSA1
Infineon Technologies
MOSFET N-CH 60V 230MA SOT23-3
IPP147N12N3GXKSA1
IPP147N12N3GXKSA1
Infineon Technologies
MOSFET N-CH 120V 56A TO220-3
IRF7403TRPBF
IRF7403TRPBF
Infineon Technologies
MOSFET N-CH 30V 8.5A 8SO
ZVN4310GTA
ZVN4310GTA
Diodes Incorporated
MOSFET N-CH 100V 1.67A SOT223
IAUC120N04S6N013ATMA1
IAUC120N04S6N013ATMA1
Infineon Technologies
IAUC120N04S6N013ATMA1
SI3474DV-T1-BE3
SI3474DV-T1-BE3
Vishay Siliconix
N-CHANNEL 100-V (D-S) MOSFET
SIHK055N60E-T1-GE3
SIHK055N60E-T1-GE3
Vishay Siliconix
E SERIES POWER MOSFET POWERPAK 1
IRFSL7534PBF
IRFSL7534PBF
Infineon Technologies
MOSFET N-CH 60V 195A TO262
AOWF125A60
AOWF125A60
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 28A TO262F
AUIRFR5505
AUIRFR5505
Infineon Technologies
MOSFET P-CH 55V 18A DPAK
TSM3N80CH C5G
TSM3N80CH C5G
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 800V 3A TO251
RSQ030N08HZGTR
RSQ030N08HZGTR
Rohm Semiconductor
MOSFET N-CH 80V 3A TSMT6

Related Product By Brand

D7V0M1U2S9-7
D7V0M1U2S9-7
Diodes Incorporated
TVS DIODE 7VWM 13VC SOD923
D10V0X1B2LP-7B
D10V0X1B2LP-7B
Diodes Incorporated
DATALINE PROTECTION PP X1-DFN100
GB0400005
GB0400005
Diodes Incorporated
CRYSTAL 4.0000MHZ 16PF TH
FL1600169Q
FL1600169Q
Diodes Incorporated
CRYSTAL 16.0000MHZ 8PF SMD
BZX84B2V7-7-F
BZX84B2V7-7-F
Diodes Incorporated
DIODE ZENER 2.7V 300MW SOT23
UDZ4V3B-7
UDZ4V3B-7
Diodes Incorporated
DIODE ZENER 4.3V 200MW SOD323
DDTC114EUA-7
DDTC114EUA-7
Diodes Incorporated
TRANS PREBIAS NPN 200MW SOT323
DMN2080UCB4-7
DMN2080UCB4-7
Diodes Incorporated
MOSFET N-CH 20V 3A X2-WLB0606-4
DGD0590FU-7
DGD0590FU-7
Diodes Incorporated
IC GATE DRV HALFBRD QFN3030-8 3K
PT8A3275WE
PT8A3275WE
Diodes Incorporated
HEATER CONTROLLER SO-8
PT7A7614S-13
PT7A7614S-13
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL 8SO
AP2121AK-1.8TRE1
AP2121AK-1.8TRE1
Diodes Incorporated
IC REG LINEAR 1.8V 200MA SOT23-5