DMN3200U-7
  • Share:

Diodes Incorporated DMN3200U-7

Manufacturer No:
DMN3200U-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN3200U-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 2.2A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:90mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:290 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):650mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.50
943

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN3200U-7 DMN3300U-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 90mOhm @ 2.2A, 4.5V 150mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±8V ±12V
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 10 V 193 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 650mW (Ta) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

STFW40N60M2
STFW40N60M2
STMicroelectronics
MOSFET N-CH 600V 34A ISOWATT
NTE2393
NTE2393
NTE Electronics, Inc
MOSFET N-CHANNEL 500V 10A TO3P
STF7N52DK3
STF7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A TO220FP
STI24N60M6
STI24N60M6
STMicroelectronics
MOSFET N-CH 600V I2PAK
SI1012CR-T1-GE3
SI1012CR-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V SC75A
FCD620N60ZF
FCD620N60ZF
onsemi
MOSFET N-CH 600V 7.3A DPAK
ZVN0545A
ZVN0545A
Diodes Incorporated
MOSFET N-CH 450V 90MA TO92-3
STWA30N65DM6AG
STWA30N65DM6AG
STMicroelectronics
MOSFET N-CH 650V 28A TO247
2SK3800
2SK3800
Sanken
MOSFET N-CH 40V 70A TO220S
NTP75N06G
NTP75N06G
onsemi
MOSFET N-CH 60V 75A TO220AB
SFT1443-H
SFT1443-H
onsemi
MOSFET N-CH 100V 9A TP
R6511END3TL1
R6511END3TL1
Rohm Semiconductor
650V 11A TO-252, LOW-NOISE POWER

Related Product By Brand

FH2700018Z
FH2700018Z
Diodes Incorporated
CRYSTAL 27.0000MHZ 10PF SMD
GC0800059
GC0800059
Diodes Incorporated
CRYSTAL 8.0000MHZ 20PF
FN0400061
FN0400061
Diodes Incorporated
XTAL OSC XO 4.0000MHZ CMOS SMD
BAS70W-7-G
BAS70W-7-G
Diodes Incorporated
DIODE SCHOTTKY SOT23
FZT689BTA
FZT689BTA
Diodes Incorporated
TRANS NPN 20V 3A SOT223-3
DMP3160LQ-7
DMP3160LQ-7
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT23 T&R
PI49FCT20803LE
PI49FCT20803LE
Diodes Incorporated
IC CLK BUFFER 1:7 150MHZ 16TSSOP
PI6C490098LE
PI6C490098LE
Diodes Incorporated
IC CLK BUFFER 1:3 25MHZ 16TSSOP
PI74AVC164245AAEX
PI74AVC164245AAEX
Diodes Incorporated
IC TRNSLTR BIDIRECTIONAL 48TSSOP
PT8A3294PE
PT8A3294PE
Diodes Incorporated
HEATER CONTROLLER DIP-8
AP64100QSP-13
AP64100QSP-13
Diodes Incorporated
DCDC CONV HV BUCK SO-8EP T&R 4K
AP7311-20WG-7
AP7311-20WG-7
Diodes Incorporated
IC REG LINEAR 2V 150MA SOT25