DMN31D5UFZ-7B
  • Share:

Diodes Incorporated DMN31D5UFZ-7B

Manufacturer No:
DMN31D5UFZ-7B
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN31D5UFZ-7B Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 220MA 3DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:220mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.35 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:22.2 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):393mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:X2-DFN0606-3
Package / Case:3-XFDFN
0 Remaining View Similar

In Stock

$0.39
1,163

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN31D5UFZ-7B DMN31D5UFO-7B  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 220mA (Ta) 410mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 100mA, 4.5V 1.5Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.35 nC @ 4.5 V 0.38 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 22.2 pF @ 15 V 22.6 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 393mW (Ta) 380mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package X2-DFN0606-3 X2-DFN0604-3
Package / Case 3-XFDFN 3-XFDFN

Related Product By Categories

STP5NK50Z
STP5NK50Z
STMicroelectronics
MOSFET N-CH 500V 4.4A TO220AB
UPA2463T1Q-E1-AX
UPA2463T1Q-E1-AX
Renesas Electronics America Inc
MOSFET N-CH 20V 6A 8HUSON
STD11NM60ND
STD11NM60ND
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
IRFR48ZTRPBF
IRFR48ZTRPBF
Infineon Technologies
MOSFET N-CH 55V 42A DPAK
FKI10300
FKI10300
Sanken
MOSFET N-CH 100V 23A TO220F
TK8P60W,RVQ
TK8P60W,RVQ
Toshiba Semiconductor and Storage
MOSFET N CH 600V 8A DPAK
IRF1104LPBF
IRF1104LPBF
Infineon Technologies
MOSFET N-CH 40V 100A TO-262
STD27N3LH5
STD27N3LH5
STMicroelectronics
MOSFET N-CH 30V 27A DPAK
IRLR8726PBF
IRLR8726PBF
Infineon Technologies
MOSFET N-CH 30V 86A DPAK
BUK9215-55A,118
BUK9215-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 55A DPAK
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK
RUF020N02TL
RUF020N02TL
Rohm Semiconductor
MOSFET N-CH 20V 2A TUMT3

Related Product By Brand

SMF4L24A-7
SMF4L24A-7
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR PP
FH1600051Q
FH1600051Q
Diodes Incorporated
CRYSTAL 16.0000MHZ 9PF SMD
GBP410
GBP410
Diodes Incorporated
MEDIUM/HIGH POWER BRIDGE GBP TUB
PR1503S-B
PR1503S-B
Diodes Incorporated
DIODE GEN PURP 200V 1.5A DO41
MMBZ5238B-7-F
MMBZ5238B-7-F
Diodes Incorporated
DIODE ZENER 8.7V 350MW SOT23-3
BZX84C22Q-7-F
BZX84C22Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
DDTC122TE-7-F
DDTC122TE-7-F
Diodes Incorporated
TRANS PREBIAS NPN 150MW SOT523
DMPH4013SK3-13
DMPH4013SK3-13
Diodes Incorporated
MOSFET P-CH 40V 55A TO252 T&R
PI3L2500ZHEX
PI3L2500ZHEX
Diodes Incorporated
IC LAN SWITCH V-QFN3590-42
PI3A3160CZGEX
PI3A3160CZGEX
Diodes Incorporated
IC SWITCH DUAL SPDT 12TDFN
PAM8823FBE48-13
PAM8823FBE48-13
Diodes Incorporated
AUDIO LOW VOLT,L-QFP7070-48EP,T&
ZR285F03TA
ZR285F03TA
Diodes Incorporated
IC VREF SHUNT 3% SOT23