DMN3150LW-7
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Diodes Incorporated DMN3150LW-7

Manufacturer No:
DMN3150LW-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN3150LW-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 28V 1.6A SOT323
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):28 V
Current - Continuous Drain (Id) @ 25°C:1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:88mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:305 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
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Similar Products

Part Number DMN3150LW-7 DMN3150L-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 28 V 28 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta) 3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 10V
Rds On (Max) @ Id, Vgs 88mOhm @ 1.6A, 4.5V 85mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 305 pF @ 5 V 305 pF @ 5 V
FET Feature - -
Power Dissipation (Max) 350mW (Ta) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-23-3
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

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