DMN3150L-7
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Diodes Incorporated DMN3150L-7

Manufacturer No:
DMN3150L-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN3150L-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 28V 3.8A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):28 V
Current - Continuous Drain (Id) @ 25°C:3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:85mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:305 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number DMN3150L-7 DMN3150LW-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 28 V 28 V
Current - Continuous Drain (Id) @ 25°C 3.8A (Ta) 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 85mOhm @ 3.6A, 4.5V 88mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 305 pF @ 5 V 305 pF @ 5 V
FET Feature - -
Power Dissipation (Max) 1.4W (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-323
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323

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