Diodes Incorporated-DMN3135LVT-7 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	3.5A
Rds On (Max) @ Id, Vgs:	60mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	4.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	305pF @ 15V
Power - Max:	840mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	TSOT-26

Diodes Incorporated DMN3135LVT-7