DMN3112SQ-7
  • Share:

Diodes Incorporated DMN3112SQ-7

Manufacturer No:
DMN3112SQ-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN3112SQ-7 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 25V~30V SOT23 T&R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:57mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:268 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.13
3,634

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN3112SQ-7 DMN3110SQ-7   DMN3112S-7  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 5.8A (Ta) 2.5A (Ta) 5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 57mOhm @ 5.8A, 10V 73mOhm @ 3.1A, 10V 57mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 3V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 8.6 nC @ 10 V -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 268 pF @ 5 V 305.8 pF @ 15 V 268 pF @ 5 V
FET Feature - - -
Power Dissipation (Max) 1.4W (Ta) 740mW (Ta) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

BSS84W-7-F
BSS84W-7-F
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT323
SK8603170L
SK8603170L
Panasonic Electronic Components
MOSFET N-CH 30V 20A/59A 8HSO
FQA18N50V2
FQA18N50V2
Fairchild Semiconductor
MOSFET N-CH 500V 20A TO3P
IPS65R1K4C6AKMA1
IPS65R1K4C6AKMA1
Infineon Technologies
MOSFET N-CH 650V 3.2A TO251-3
IXTP2N100P
IXTP2N100P
IXYS
MOSFET N-CH 1000V 2A TO220AB
DMP6023LSS-13
DMP6023LSS-13
Diodes Incorporated
MOSFET P-CH 60V 6.6A 8SO
SI7149ADP-T1-GE3
SI7149ADP-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 50A PPAK SO-8
PJA3448_R1_00001
PJA3448_R1_00001
Panjit International Inc.
SOT-23, MOSFET
SIHJ7N65E-T1-GE3
SIHJ7N65E-T1-GE3
Vishay Siliconix
MOSFET N-CH 650V 7.9A PPAK SO-8
IXTY1N80P
IXTY1N80P
IXYS
MOSFET N-CH 800V 1A TO252
FDD8870-F085
FDD8870-F085
onsemi
FDD8870 - N-CHANNEL POWERTRENCH
IRF9Z14STRL
IRF9Z14STRL
Vishay Siliconix
MOSFET P-CH 60V 6.7A D2PAK

Related Product By Brand

D10V0X1B2LPQ-7B
D10V0X1B2LPQ-7B
Diodes Incorporated
LOW CAPACITANCE TVS X1-DFN1006-2
SMF4L45CA-7
SMF4L45CA-7
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR PP
FL2710010
FL2710010
Diodes Incorporated
CRYSTAL 27.1200MHZ 16PF SMD
F91200091
F91200091
Diodes Incorporated
CRYSTAL 12.0000MHZ 18PF
PD3S160Q-7
PD3S160Q-7
Diodes Incorporated
DIODE SCHOTTKY 60V 1A POWERDI323
BZX84C2V4W-7
BZX84C2V4W-7
Diodes Incorporated
DIODE ZENER 2.4V 200MW SOT323
DDC142TH-7
DDC142TH-7
Diodes Incorporated
TRANS 2NPN PREBIAS 0.15W SOT563
DMG3406L-7
DMG3406L-7
Diodes Incorporated
MOSFET N-CH 30V 3.6A SOT23
ZXMN10A08E6TA
ZXMN10A08E6TA
Diodes Incorporated
MOSFET N-CH 100V 1.5A SOT26
AM4967RGSTR-G1
AM4967RGSTR-G1
Diodes Incorporated
IC MOTOR DRIVER 5.5V-16V 16SSOP
PT8A3240APE
PT8A3240APE
Diodes Incorporated
HEATER CONTROLLER DIP-8
AP431WG-7
AP431WG-7
Diodes Incorporated
IC VREF SHUNT ADJ 1% SC59-3