DMN3112S-7
  • Share:

Diodes Incorporated DMN3112S-7

Manufacturer No:
DMN3112S-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN3112S-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 5.8A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:57mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:268 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
251

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN3112S-7 DMN3112SQ-7   DMN3110S-7  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 5.8A (Ta) 5.8A (Ta) 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 57mOhm @ 5.8A, 10V 57mOhm @ 5.8A, 10V 73mOhm @ 3.1mA, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - 8.6 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 268 pF @ 5 V 268 pF @ 5 V 305.8 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 1.4W (Ta) 1.4W (Ta) 740mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

FQD5N50TF
FQD5N50TF
Fairchild Semiconductor
MOSFET N-CH 500V 3.5A DPAK
SPP03N60S5
SPP03N60S5
Infineon Technologies
N-CHANNEL POWER MOSFET
FDD24AN06LA0
FDD24AN06LA0
Fairchild Semiconductor
MOSFET N-CH 60V 7.1A/40A TO252AA
BUK9Y12-100E,115
BUK9Y12-100E,115
Nexperia USA Inc.
MOSFET N-CH 100V 85A LFPAK56
SSM3K127TU,LF
SSM3K127TU,LF
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 2A UFM
SIA462DJ-T1-GE3
SIA462DJ-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 12A PPAK SC70-6
PJQ2461_R1_00001
PJQ2461_R1_00001
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M
DMN2009LSS-13
DMN2009LSS-13
Diodes Incorporated
MOSFET N-CH 20V 12A 8SOP
PJQ5428_R2_00001
PJQ5428_R2_00001
Panjit International Inc.
30V N-CHANNEL ENHANCEMENT MODE M
MTB6N60E1
MTB6N60E1
onsemi
N-CHANNEL POWER MOSFET
FQB19N20TM
FQB19N20TM
onsemi
MOSFET N-CH 200V 19.4A D2PAK
UPA2820T1S-E2-AT
UPA2820T1S-E2-AT
Renesas Electronics America Inc
MOSFET N-CH 30V 8HVSON

Related Product By Brand

FM5000004
FM5000004
Diodes Incorporated
XTAL OSC XO 50.0000MHZ CMOS SMD
SBR10A45SP5-13
SBR10A45SP5-13
Diodes Incorporated
DIODE SBR 45V 10A POWERDI5
FCX493TA
FCX493TA
Diodes Incorporated
TRANS NPN 100V 1A SOT89-3
DMP2110UQ-7
DMP2110UQ-7
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT23 T&R 3
PAM8008DR
PAM8008DR
Diodes Incorporated
IC AMP CLASS D STEREO 2.4W 16SOP
APX358SG-13
APX358SG-13
Diodes Incorporated
IC OPAMP GP 2 CIRCUIT 8SOP
74LVC1G07FW5-7
74LVC1G07FW5-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V 6DFN
PI74FCT273TSE
PI74FCT273TSE
Diodes Incorporated
IC FF D-TYPE SNGL 8BIT 20SOIC
PI4ULS3V08MZLE
PI4ULS3V08MZLE
Diodes Incorporated
IC TRNSLTR BIDIRECTIONAL 32TQFN
AP2331W-7
AP2331W-7
Diodes Incorporated
LOAD SWITCH SC59
BCR401UW6Q-7
BCR401UW6Q-7
Diodes Incorporated
IC LED DRVR LIN PWM 100MA SOT26
APX809S-26SR-7
APX809S-26SR-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23