DMN3112S-7
  • Share:

Diodes Incorporated DMN3112S-7

Manufacturer No:
DMN3112S-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN3112S-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 5.8A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:57mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:268 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
251

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN3112S-7 DMN3112SQ-7   DMN3110S-7  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 5.8A (Ta) 5.8A (Ta) 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 57mOhm @ 5.8A, 10V 57mOhm @ 5.8A, 10V 73mOhm @ 3.1mA, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - 8.6 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 268 pF @ 5 V 268 pF @ 5 V 305.8 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 1.4W (Ta) 1.4W (Ta) 740mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

FDMS030N06B
FDMS030N06B
onsemi
MOSFET N-CH 60V 22.1A/100A 8PQFN
SI7450DP-T1-GE3
SI7450DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 200V 3.2A PPAK SO-8
BUK7M12-40EX
BUK7M12-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 48A LFPAK33
IXTP6N50D2
IXTP6N50D2
IXYS
MOSFET N-CH 500V 6A TO220AB
PSMN3R2-25YLC,115
PSMN3R2-25YLC,115
NXP USA Inc.
MOSFET N-CH 25V 100A LFPAK56
STP4NK50Z
STP4NK50Z
STMicroelectronics
MOSFET N-CH 500V 3A TO220AB
SI3473DV-T1-E3
SI3473DV-T1-E3
Vishay Siliconix
MOSFET P-CH 12V 5.9A 6TSOP
STY80NM60N
STY80NM60N
STMicroelectronics
MOSFET N-CH 600V 74A MAX247
CSD23201W10
CSD23201W10
Texas Instruments
MOSFET P-CH 12V 2.2A 4DSBGA
IXFH12N100Q
IXFH12N100Q
IXYS
MOSFET N-CH 1000V 12A TO247AD
NTD5865N-1G
NTD5865N-1G
onsemi
MOSFET N-CH 60V 43A DPAK
NVD4856NT4G-VF01
NVD4856NT4G-VF01
onsemi
MOSFET N-CH 25V 13.3A/89A DPAK

Related Product By Brand

FL5000062
FL5000062
Diodes Incorporated
CRYSTAL 50.0000MHZ 19PF SMD
BAT43WS-7-F
BAT43WS-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
S3A-13-F
S3A-13-F
Diodes Incorporated
DIODE GEN PURP 50V 3A SMC
FMMT6517TA
FMMT6517TA
Diodes Incorporated
TRANS NPN 350V 0.5A SOT23-3
DMN2024UVTQ-7
DMN2024UVTQ-7
Diodes Incorporated
MOSFET BVDSS: 8V~24V TSOT26 T&R
DMP3007LK3-13
DMP3007LK3-13
Diodes Incorporated
MOSFET P-CH 30V 18.5A TO252
DMTH3002LK3-13
DMTH3002LK3-13
Diodes Incorporated
MOSFET BVDSS: 25V~30V TO252 T&R
2N7002E-7-F-79
2N7002E-7-F-79
Diodes Incorporated
DIODE
PI6C49CB02Q3WEX
PI6C49CB02Q3WEX
Diodes Incorporated
CLOCK BUFFER SO-8
DGD0503FN-7
DGD0503FN-7
Diodes Incorporated
IC GATE DRV HALF-BRDG DFN3030-10
ZRC250A03
ZRC250A03
Diodes Incorporated
IC VREF SHUNT 3% E-LINE
AP432QL-7
AP432QL-7
Diodes Incorporated
IC VREF SHUNT ADJ SOT25