Diodes Incorporated-DMN30H4D0LFDE-13 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	300 V
Current - Continuous Drain (Id) @ 25°C:	550mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2.7V, 10V
Rds On (Max) @ Id, Vgs:	4Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id:	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	7.6 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	187.3 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	630mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	U-DFN2020-6 (Type E)
Package / Case:	6-PowerUDFN

Diodes Incorporated DMN30H4D0LFDE-13