DMN3069L-13
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Diodes Incorporated DMN3069L-13

Manufacturer No:
DMN3069L-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN3069L-13 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 25V~30V SOT23 T&R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:30mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:309 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):800mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number DMN3069L-13 DMN3066L-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 5.3A (Ta) 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 30mOhm @ 4A, 10V 67mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1.8V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.1 nC @ 10 V 4.1 nC @ 4.5 V
Vgs (Max) ±20V ±12V
Input Capacitance (Ciss) (Max) @ Vds 309 pF @ 15 V 353 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 800mW 810mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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