DMN3069L-13
  • Share:

Diodes Incorporated DMN3069L-13

Manufacturer No:
DMN3069L-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN3069L-13 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 25V~30V SOT23 T&R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:30mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:309 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):800mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.07
14,833

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN3069L-13 DMN3066L-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 5.3A (Ta) 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 30mOhm @ 4A, 10V 67mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1.8V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.1 nC @ 10 V 4.1 nC @ 4.5 V
Vgs (Max) ±20V ±12V
Input Capacitance (Ciss) (Max) @ Vds 309 pF @ 15 V 353 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 800mW 810mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

IRF5210PBF
IRF5210PBF
Infineon Technologies
MOSFET P-CH 100V 40A TO220AB
SI2306BDS-T1-BE3
SI2306BDS-T1-BE3
Vishay Siliconix
N-CHANNEL 30-V (D-S) MOSFET
SQ2361AEES-T1_GE3
SQ2361AEES-T1_GE3
Vishay Siliconix
MOSFET P-CH 60V 2.8A SSOT23
FDD18N20LZ
FDD18N20LZ
onsemi
MOSFET N-CH 200V 16A DPAK
ZVN4206AV
ZVN4206AV
Diodes Incorporated
MOSFET N-CH 60V 600MA TO92-3
SI2356DS-T1-BE3
SI2356DS-T1-BE3
Vishay Siliconix
N-CHANNEL 40-V (D-S) MOSFET
IPT210N25NFDATMA1
IPT210N25NFDATMA1
Infineon Technologies
MV POWER MOS
FQP7N60
FQP7N60
onsemi
MOSFET N-CH 600V 7.4A TO220-3
SI4833ADY-T1-E3
SI4833ADY-T1-E3
Vishay Siliconix
MOSFET P-CH 30V 4.6A 8SO
IXTK80N25
IXTK80N25
IXYS
MOSFET N-CH 250V 80A TO264
FDD9511L-F085
FDD9511L-F085
onsemi
MOSFET P-CH 40V 25A DPAK
RDD022N60TL
RDD022N60TL
Rohm Semiconductor
MOSFET N-CH 600V 2A CPT3

Related Product By Brand

D60V0L4B10LP-7
D60V0L4B10LP-7
Diodes Incorporated
TVS DIODE 60VWM 125VC U-DFN2510
NX7021E0125.000000
NX7021E0125.000000
Diodes Incorporated
XTAL OSC XO 125.0000MHZ LVPECL
BAV99-7-F
BAV99-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 300MA SOT23-3
1N4732A-T
1N4732A-T
Diodes Incorporated
DIODE ZENER 4.7V 1W DO41
BZT52C6V2S-7
BZT52C6V2S-7
Diodes Incorporated
DIODE ZENER 6.2V 200MW SOD323
SD1A200E
SD1A200E
Diodes Incorporated
THYRISTOR DO-41 T&R 5K
DCX4710H-7
DCX4710H-7
Diodes Incorporated
TRANS PREBIAS NPN/PNP SOT563
PI74AVC+16244K
PI74AVC+16244K
Diodes Incorporated
IC BUF NON-INVERT 3.6V 48TVSOP
PI74AVC+16721A
PI74AVC+16721A
Diodes Incorporated
IC FF D-TYPE SNGL 20BIT 56TSSOP
AP1661P-G1
AP1661P-G1
Diodes Incorporated
IC PFC CTRLR BCM 8DIP
ZRC400A01
ZRC400A01
Diodes Incorporated
IC VREF SHUNT 1% E-LINE
AP63356QZV-7
AP63356QZV-7
Diodes Incorporated
DCDC CONV HV BUCK V-DFN3020-13 T