DMN3067LW-7
  • Share:

Diodes Incorporated DMN3067LW-7

Manufacturer No:
DMN3067LW-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN3067LW-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 2.6A SOT-323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:67mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4.6 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:447 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

$0.43
1,424

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN3067LW-7 DMN3065LW-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta) 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 10V
Rds On (Max) @ Id, Vgs 67mOhm @ 2.5A, 4.5V 52mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.6 nC @ 4.5 V 11.7 nC @ 10 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 447 pF @ 10 V 465 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 770mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-323
Package / Case SC-70, SOT-323 SC-70, SOT-323

Related Product By Categories

IRFD014PBF
IRFD014PBF
Vishay Siliconix
MOSFET N-CH 60V 1.7A 4DIP
SSM3K341TU,LXHF
SSM3K341TU,LXHF
Toshiba Semiconductor and Storage
AECQ MOSFET NCH 60V 6A SOT323F
SI4464DY-T1-E3
SI4464DY-T1-E3
Vishay Siliconix
MOSFET N-CH 200V 1.7A 8SO
IPW65R420CFDFKSA2
IPW65R420CFDFKSA2
Infineon Technologies
MOSFET N-CH 650V 8.7A TO247-3
IXTY10P15T
IXTY10P15T
IXYS
MOSFET P-CH 150V 10A TO252
IXFH40N30Q
IXFH40N30Q
IXYS
MOSFET N-CH 300V 40A TO247AD
IRLR8113PBF
IRLR8113PBF
Infineon Technologies
MOSFET N-CH 30V 94A DPAK
FDH27N50
FDH27N50
onsemi
MOSFET N-CH 500V 27A TO247-3
HUF75343P3
HUF75343P3
onsemi
MOSFET N-CH 55V 75A TO220-3
SUP36N20-54P-E3
SUP36N20-54P-E3
Vishay Siliconix
MOSFET N-CH 200V 36A TO220AB
AOD446
AOD446
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 75V 10A TO252
FQB8N60CTM-WS
FQB8N60CTM-WS
onsemi
MOSFET N-CH 600V 7.5A D2PAK

Related Product By Brand

SMBJ54CA-13
SMBJ54CA-13
Diodes Incorporated
TVS DIODE 54VWM 87.1VC SMB
FH2700019Z
FH2700019Z
Diodes Incorporated
CRYSTAL 27.0000MHZ 10PF SMD
FK3970001
FK3970001
Diodes Incorporated
XTAL OSC XO 39.7204MHZ CMOS
FN6550010
FN6550010
Diodes Incorporated
XTAL OSC XO 65.5360MHZ CMOS
NX52K00001
NX52K00001
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM5032 T&
SBR2A40SA-13
SBR2A40SA-13
Diodes Incorporated
DIODE SBR 40V 2A SMA
DMN2080UCB4-7
DMN2080UCB4-7
Diodes Incorporated
MOSFET N-CH 20V 3A X2-WLB0606-4
DMTH8028LPSWQ-13
DMTH8028LPSWQ-13
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI50
APX393M8G-13
APX393M8G-13
Diodes Incorporated
IC OP AMP R-R DUAL 8-MSOP
PT8A3241PEX
PT8A3241PEX
Diodes Incorporated
HEATER CONTROLLER DIP-8
AP1117K50G-13
AP1117K50G-13
Diodes Incorporated
IC REG LINEAR 5V 1A TO263-2
AH3376-PG-A
AH3376-PG-A
Diodes Incorporated
MAGNETIC SWITCH UNIPOLAR 3SIP