DMN3065LW-13
  • Share:

Diodes Incorporated DMN3065LW-13

Manufacturer No:
DMN3065LW-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN3065LW-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 4A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:52mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11.7 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:465 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):770mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

$0.48
1,392

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN3065LW-13 DMN3067LW-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta) 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 52mOhm @ 4A, 10V 67mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.7 nC @ 10 V 4.6 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 465 pF @ 15 V 447 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 770mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-323
Package / Case SC-70, SOT-323 SC-70, SOT-323

Related Product By Categories

DMG2302U-7
DMG2302U-7
Diodes Incorporated
MOSFET N-CH 20V 4.2A SOT23-3
IXTQ36N30P
IXTQ36N30P
IXYS
MOSFET N-CH 300V 36A TO3P
2SJ650
2SJ650
onsemi
MOSFET P-CH 60V 12A TO220ML
FDS7082N3
FDS7082N3
Fairchild Semiconductor
MOSFET N-CH 30V 17.5A 8SO
EPC2302
EPC2302
EPC
TRANS GAN 100V DIE .0019OHM
SISHA14DN-T1-GE3
SISHA14DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 19.7A/20A PPAK
BUK9Y11-80EX
BUK9Y11-80EX
Nexperia USA Inc.
MOSFET N-CH 80V 84A LFPAK56
PSMN070-200B,118-NEX
PSMN070-200B,118-NEX
Nexperia USA Inc.
MOSFET N-CH 200V 35A D2PAK
IPW60R160P6
IPW60R160P6
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR
IRFB9N60A
IRFB9N60A
Vishay Siliconix
MOSFET N-CH 600V 9.2A TO220AB
IRF7451
IRF7451
Infineon Technologies
MOSFET N-CH 150V 3.6A 8SO
IXTA180N085T
IXTA180N085T
IXYS
MOSFET N-CH 85V 180A TO263

Related Product By Brand

FL3200022
FL3200022
Diodes Incorporated
CRYSTAL 32.0000MHZ 16PF SMD
PXA000015
PXA000015
Diodes Incorporated
XTAL OSC XO 100.0000MHZ LVDS
SBR10120CTL-13
SBR10120CTL-13
Diodes Incorporated
DIODE ARRAY SBR 120V 5A TO252-3
RS2J-13
RS2J-13
Diodes Incorporated
DIODE GEN PURP 600V 1.5A SMB
PI74LPT16373AV
PI74LPT16373AV
Diodes Incorporated
IC 16-BIT TRANS LATCH 48 SSOP
ZXMS6003GTA
ZXMS6003GTA
Diodes Incorporated
IC PWR DRIVER N-CHAN 1:1 SOT223
APX803L20-35SA-7
APX803L20-35SA-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23
AP432AQL-7
AP432AQL-7
Diodes Incorporated
IC VREF SHUNT ADJ SOT25
AZ432BZ-G1
AZ432BZ-G1
Diodes Incorporated
IC VREF SHUNT ADJ 1% TO92
PAM2401SCADJ
PAM2401SCADJ
Diodes Incorporated
IC REG BOOST ADJUSTABLE 1A 8MSOP
AP7366-20W5-7
AP7366-20W5-7
Diodes Incorporated
IC REG LINEAR 2V 600MA SOT25
AP1121ASL-13
AP1121ASL-13
Diodes Incorporated
IC REG LIN 2.5V/3.3V 1A/1A 8SOP