DMN3026LVTQ-7
  • Share:

Diodes Incorporated DMN3026LVTQ-7

Manufacturer No:
DMN3026LVTQ-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN3026LVTQ-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 6.6A TSOT26
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:6.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:23mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:643 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TSOT-26
Package / Case:SOT-23-6 Thin, TSOT-23-6
0 Remaining View Similar

In Stock

$0.17
5,383

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN3026LVTQ-7 DMN3026LVT-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 6.6A (Ta) 6.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 23mOhm @ 6.5A, 10V 23mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 10 V 12.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 643 pF @ 15 V 643 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 1.2W (Ta) 1.2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TSOT-26 TSOT-23-6
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

Related Product By Categories

IPZA60R080P7XKSA1
IPZA60R080P7XKSA1
Infineon Technologies
MOSFET N-CH 600V 37A TO247-4
STFI13N60M2
STFI13N60M2
STMicroelectronics
MOSFET N-CH 600V 11A I2PAKFP
IAUZ40N10S5N130ATMA1
IAUZ40N10S5N130ATMA1
Infineon Technologies
MOSFET N-CH 100V 40A 8TSDSON-33
ZVP4525E6TA
ZVP4525E6TA
Diodes Incorporated
MOSFET P-CH 250V 197MA SOT23-6
BUK9217-75B,118
BUK9217-75B,118
Nexperia USA Inc.
MOSFET N-CH 75V 64A DPAK
STF9HN65M2
STF9HN65M2
STMicroelectronics
MOSFET N-CH 650V 5.5A TO220FP
AUIRLR2905ZTRL
AUIRLR2905ZTRL
Infineon Technologies
MOSFET N-CH 55V 42A DPAK
AUIRFSA8409-7P
AUIRFSA8409-7P
Infineon Technologies
MOSFET N-CH 40V 523A D2PAK
APT30F60J
APT30F60J
Microchip Technology
MOSFET N-CH 600V 31A ISOTOP
PSMN050-80PS,127
PSMN050-80PS,127
NXP USA Inc.
MOSFET N-CH 80V 22A TO220AB
IRF3707ZCSTRLP
IRF3707ZCSTRLP
Infineon Technologies
MOSFET N-CH 30V 59A D2PAK
NVMFS5C426NT3G
NVMFS5C426NT3G
onsemi
MOSFET N-CH 40V 5DFN

Related Product By Brand

D24V0L1B2LPS-7B
D24V0L1B2LPS-7B
Diodes Incorporated
TVS DIODE 24VWM 46VC DFN1006-2
FW1920007
FW1920007
Diodes Incorporated
CRYSTAL 19.2000MHZ SURFACE MOUNT
FY1100010
FY1100010
Diodes Incorporated
CRYSTAL 11.0592MHZ 20PF SMD
FK0400016
FK0400016
Diodes Incorporated
XTAL OSC XO 4.0960MHZ LVCMOS SMD
FK9830002
FK9830002
Diodes Incorporated
XTAL OSC XO 98.3040MHZ CMOS SMD
GBU606
GBU606
Diodes Incorporated
BRIDGE RECT 1PHASE 600V 6A GBU
ZC931TC
ZC931TC
Diodes Incorporated
DIODE VAR CAPACITANCE SOT23-3
D3Z4V7BF-7
D3Z4V7BF-7
Diodes Incorporated
DIODE ZENER 4.65V 400MW SOD323F
MMST4124-7-F
MMST4124-7-F
Diodes Incorporated
TRANS NPN 25V 0.2A SOT323
PI3L100QE
PI3L100QE
Diodes Incorporated
IC ETHERNET SWITCH QUAD 16QSOP
PT7A7515WE
PT7A7515WE
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL 8SOIC
AZ78L09Z-G1
AZ78L09Z-G1
Diodes Incorporated
IC REG LINEAR 9V 100MA TO92