DMN3023L-13
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Diodes Incorporated DMN3023L-13

Manufacturer No:
DMN3023L-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN3023L-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 6.2A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:25mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:873 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):900mW (Ta)
Operating Temperature:-55°C ~ 155°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number DMN3023L-13 DMN3053L-13   DMN3028L-13  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 6.2A (Ta) 4A (Ta) 6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V 2.5V, 10V 2.5V, 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 4A, 10V 45mOhm @ 4A, 10V 25mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250µA 1.4V @ 250µA 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18.4 nC @ 10 V 17.2 nC @ 10 V 10.9 nC @ 10 V
Vgs (Max) ±20V ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 873 pF @ 15 V 676 pF @ 15 V 680 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 900mW (Ta) 760mW (Ta) 860mW (Ta)
Operating Temperature -55°C ~ 155°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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