DMN3016LSS-13
  • Share:

Diodes Incorporated DMN3016LSS-13

Manufacturer No:
DMN3016LSS-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN3016LSS-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 10.3A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:12mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1415 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

$0.57
720

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN3016LSS-13 DMN3010LSS-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 10.3A (Ta) 16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 12A, 10V 9mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25.1 nC @ 10 V 43.7 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1415 pF @ 15 V 2096 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 1.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SOP
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

AON6792
AON6792
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 44A/85A 8DFN
FQP6N25
FQP6N25
Fairchild Semiconductor
MOSFET N-CH 250V 5.5A TO220-3
IPB010N06NATMA1
IPB010N06NATMA1
Infineon Technologies
MOSFET N-CH 60V 45A/180A TO263-7
IXFN80N50
IXFN80N50
IXYS
MOSFET N-CH 500V 80A SOT-227B
SI7108DN-T1-GE3
SI7108DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V 14A PPAK1212-8
DMP3160LQ-7
DMP3160LQ-7
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT23 T&R
DMT15H017LPSW-13
DMT15H017LPSW-13
Diodes Incorporated
MOSFET BVDSS: 101V~250V POWERDI5
STFW38N65M5
STFW38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A ISOWATT
NTD2955-1G
NTD2955-1G
onsemi
MOSFET P-CH 60V 12A IPAK
IPB45N06S409ATMA1
IPB45N06S409ATMA1
Infineon Technologies
MOSFET N-CH 60V 45A TO263-3
FDME410NZT
FDME410NZT
onsemi
MOSFET N-CH 20V 7A MICROFET
SUP65P04-15-E3
SUP65P04-15-E3
Vishay Siliconix
MOSFET P-CH 40V 65A TO220AB

Related Product By Brand

SMCJ12CA-13-F
SMCJ12CA-13-F
Diodes Incorporated
TVS DIODE 12VWM 19.9VC SMC
FL4000219
FL4000219
Diodes Incorporated
CRYSTAL 40.0000MHZ 9PF SMD
YNETHE125
YNETHE125
Diodes Incorporated
XTAL OSC VCXO 125.0000MHZ CMOS
FN0810019
FN0810019
Diodes Incorporated
XTAL OSC XO 8.1920MHZ CMOS SMD
ZHCS506TC
ZHCS506TC
Diodes Incorporated
DIODE SCHOTTKY 60V 500MA SOT23-3
DDA114EU-7-F
DDA114EU-7-F
Diodes Incorporated
TRANS 2PNP PREBIAS 0.2W SOT363
DMT6013LFDF-7
DMT6013LFDF-7
Diodes Incorporated
MOSFET N-CH 60V 10A 6UDFN
PI7C9X760BCLE
PI7C9X760BCLE
Diodes Incorporated
IC SPI TO UART BRDG 16TSSOP 96PC
PI4ULS5V108Q1LEX
PI4ULS5V108Q1LEX
Diodes Incorporated
INTERFACE ULS TSSOP-20
AP3012KTR-G1
AP3012KTR-G1
Diodes Incorporated
IC REG BOOST ADJ 500MA SOT23-5
AP7383-50WR-7
AP7383-50WR-7
Diodes Incorporated
IC REG LIN 5V 150MA SOT25 T&R 3K
AZ1084CS-1.8TRE1
AZ1084CS-1.8TRE1
Diodes Incorporated
IC REG LINEAR 1.8V 5A TO263