DMN3016LFDF-7
  • Share:

Diodes Incorporated DMN3016LFDF-7

Manufacturer No:
DMN3016LFDF-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN3016LFDF-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 12A 6UDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1415 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.02W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:U-DFN2020-6 (Type F)
Package / Case:6-UDFN Exposed Pad
0 Remaining View Similar

In Stock

$0.49
1,142

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN3016LFDF-7 DMN3016LFDE-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta) 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 11A, 10V 12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25.1 nC @ 10 V 25.1 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1415 pF @ 15 V 1415 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.02W (Ta) 730mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package U-DFN2020-6 (Type F) U-DFN2020-6 (Type E)
Package / Case 6-UDFN Exposed Pad 6-PowerUDFN

Related Product By Categories

UPA1728G-E1-AT
UPA1728G-E1-AT
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
NTLJS3180PZTBG
NTLJS3180PZTBG
onsemi
SMALL SIGNAL FIELD-EFFECT TRANSI
TK31Z60X,S1F
TK31Z60X,S1F
Toshiba Semiconductor and Storage
X35 PB-F POWER MOSFET TRANSISTOR
BUK9Y6R0-60E,115
BUK9Y6R0-60E,115
Nexperia USA Inc.
MOSFET N-CH 60V 100A LFPAK56
IRF730ASPBF
IRF730ASPBF
Vishay Siliconix
MOSFET N-CH 400V 5.5A D2PAK
STF24NM60N
STF24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220FP
RM5N800T2
RM5N800T2
Rectron USA
MOSFET N-CHANNEL 800V 5A TO220-3
IPD11DP10NMATMA1
IPD11DP10NMATMA1
Infineon Technologies
TRENCH >=100V PG-TO252-3
NTTFS005N04CTAG
NTTFS005N04CTAG
onsemi
MOSFET N-CH 40V 17A/69A 8WDFN
SPD100N03S2L-04
SPD100N03S2L-04
Infineon Technologies
MOSFET N-CH 30V 100A TO252-5
NTB6448ANT4G
NTB6448ANT4G
onsemi
MOSFET N-CH 100V 80A D2PAK
SFT1341-C-TL-W
SFT1341-C-TL-W
onsemi
MOSFET P-CH 40V 10A DPAK/TP-FA

Related Product By Brand

NX3231A0100.000000
NX3231A0100.000000
Diodes Incorporated
XTAL OSC XO 100.0000MHZ LVDS SMD
FN0600010
FN0600010
Diodes Incorporated
XTAL OSC XO 6.0000MHZ CMOS SMD
IMT4-7-F
IMT4-7-F
Diodes Incorporated
TRANS 2PNP 120V 0.05A SOT26
DDTC114ECA-7-F
DDTC114ECA-7-F
Diodes Incorporated
TRANS PREBIAS NPN 200MW SOT23-3
DMP6023LSS-13
DMP6023LSS-13
Diodes Incorporated
MOSFET P-CH 60V 6.6A 8SO
PI90LVB050L
PI90LVB050L
Diodes Incorporated
IC TRANSCEIVER HALF 2/2 16TSSOP
74LVCE1G04SE-7
74LVCE1G04SE-7
Diodes Incorporated
IC INVERTER 1CH 1-INP SOT353
AP3125HAKTR-G1
AP3125HAKTR-G1
Diodes Incorporated
IC OFFLINE SWITCH FLYBACK SOT26
AP9101CAK6-BATRG1
AP9101CAK6-BATRG1
Diodes Incorporated
IC BATT PROT LI-ION 1CELL SOT26
AP9101CAK-BKTRG1
AP9101CAK-BKTRG1
Diodes Incorporated
IC BATT PROT LI-ION 1CELL SOT25
AP7341-285FS4-7
AP7341-285FS4-7
Diodes Incorporated
IC REG LINEAR 2.85V 300MA 4DFN
AP1117K50L-13
AP1117K50L-13
Diodes Incorporated
IC REG LINEAR 5V 1A TO263-2