DMN3016LFDE-13
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Diodes Incorporated DMN3016LFDE-13

Manufacturer No:
DMN3016LFDE-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN3016LFDE-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 10A 6UDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1415 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):730mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:U-DFN2020-6 (Type E)
Package / Case:6-PowerUDFN
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Similar Products

Part Number DMN3016LFDE-13 DMN3016LFDF-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta) 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 11A, 10V 12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25.1 nC @ 10 V 25.1 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1415 pF @ 15 V 1415 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 730mW (Ta) 2.02W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package U-DFN2020-6 (Type E) U-DFN2020-6 (Type F)
Package / Case 6-PowerUDFN 6-UDFN Exposed Pad

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