DMN3016LFDE-13
  • Share:

Diodes Incorporated DMN3016LFDE-13

Manufacturer No:
DMN3016LFDE-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN3016LFDE-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 10A 6UDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1415 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):730mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:U-DFN2020-6 (Type E)
Package / Case:6-PowerUDFN
0 Remaining View Similar

In Stock

$0.46
1,124

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN3016LFDE-13 DMN3016LFDF-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta) 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 11A, 10V 12mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25.1 nC @ 10 V 25.1 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1415 pF @ 15 V 1415 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 730mW (Ta) 2.02W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package U-DFN2020-6 (Type E) U-DFN2020-6 (Type F)
Package / Case 6-PowerUDFN 6-UDFN Exposed Pad

Related Product By Categories

AOI4286
AOI4286
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 100V 4A/14A TO251A
PMZ290UN315
PMZ290UN315
NXP USA Inc.
SMALL SIGNAL FET
SSM3K59CTB,L3F
SSM3K59CTB,L3F
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 2A CST3B
AOSS21311C
AOSS21311C
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3
BUK6Y33-60PX
BUK6Y33-60PX
Nexperia USA Inc.
MOSFET P-CH 60V 30A LFPAK56
SI6415DQ-T1-BE3
SI6415DQ-T1-BE3
Vishay Siliconix
P-CHANNEL 30-V (D-S) MOSFET
2SK2413-T-AZ
2SK2413-T-AZ
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
APT43M60B2
APT43M60B2
Microchip Technology
MOSFET N-CH 600V 45A T-MAX
IRFB17N60KPBF
IRFB17N60KPBF
Vishay Siliconix
MOSFET N-CH 600V 17A TO220AB
IRF7322D1TRPBF
IRF7322D1TRPBF
Infineon Technologies
MOSFET P-CH 20V 5.3A 8SO
BSS139L6327HTSA1
BSS139L6327HTSA1
Infineon Technologies
MOSFET N-CH 250V 100MA SOT23-3
AOL1428A
AOL1428A
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 12.4A ULTRASO8

Related Product By Brand

1.5KE200CA-T
1.5KE200CA-T
Diodes Incorporated
TVS DIODE 171VWM 274VC DO201
P6KE130CA-T
P6KE130CA-T
Diodes Incorporated
TVS DIODE 111VWM 179VC DO15
FL2000099A
FL2000099A
Diodes Incorporated
CRYSTAL SURFACE MOUNT
FL2450060Q
FL2450060Q
Diodes Incorporated
CRYSTAL SURFACE MOUNT
FD4800047
FD4800047
Diodes Incorporated
XTAL OSC XO 48.0000MHZ CMOS SMD
FKF620004
FKF620004
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM3225 T&
PBPC602
PBPC602
Diodes Incorporated
BRIDGE RECT 1P 100V 4A PBPC-6
MBR20100CT-E1
MBR20100CT-E1
Diodes Incorporated
DIODE ARRAY SCHOTTKY 100V TO220
BZX84C5V1Q-7-F
BZX84C5V1Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
PI6C557-03AQLEX
PI6C557-03AQLEX
Diodes Incorporated
IC CLOCK GENERATOR 16TSSOP
74LVC1G125FX4-7
74LVC1G125FX4-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V 6DFN
ZRT062GC1TA
ZRT062GC1TA
Diodes Incorporated
IC VREF SHUNT 1% SOT223