DMN3013LDG-13
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Diodes Incorporated DMN3013LDG-13

Manufacturer No:
DMN3013LDG-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN3013LDG-13 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 25V-30V POWERDI333
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:9.5A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs:14.3mOhm @ 4A, 8V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:600pF @ 15V
Power - Max:2.16W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerLDFN
Supplier Device Package:PowerDI3333-8 (Type D)
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Similar Products

Part Number DMN3013LDG-13 DMN3013LFG-13   DMN3012LDG-13  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Obsolete
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Standard Standard
Drain to Source Voltage (Vdss) 30V 30V 30V
Current - Continuous Drain (Id) @ 25°C 9.5A (Ta), 15A (Tc) 9.5A (Ta), 15A (Tc) 10A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs 14.3mOhm @ 4A, 8V 14.3mOhm @ 4A, 8V 12mOhm @ 15A, 5V, 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.2V @ 250µA 2.1V @ 250µA, 1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.7nC @ 4.5V 5.7nC @ 4.5V 6.1nC @ 4.5V, 12.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 15V 600pF @ 15V 850pF @ 15V, 1480pF @ 15V
Power - Max 2.16W (Ta) 2.16W (Ta) 2.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerLDFN 8-PowerLDFN 8-PowerLDFN
Supplier Device Package PowerDI3333-8 (Type D) PowerDI3333-8 (Type D) PowerDI3333-8 (Type D)

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