DMN2710UTQ-7
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Diodes Incorporated DMN2710UTQ-7

Manufacturer No:
DMN2710UTQ-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2710UTQ-7 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 8V~24V SOT523 T&R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:870mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 4.5 V
Vgs (Max):±6V
Input Capacitance (Ciss) (Max) @ Vds:42 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):320mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-523
Package / Case:SOT-523
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In Stock

$0.45
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Similar Products

Part Number DMN2710UTQ-7 DMN2310UTQ-7   DMN2710UT-7  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 870mA (Ta) 1.2A (Ta) 870mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 450mOhm @ 600mA, 4.5V 240mOhm @ 300mA, 4.5V 450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 950mV @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V 0.7 nC @ 4.5 V 0.6 nC @ 4.5 V
Vgs (Max) ±6V ±8V ±6V
Input Capacitance (Ciss) (Max) @ Vds 42 pF @ 16 V 38 pF @ 10 V 42 pF @ 16 V
FET Feature - - -
Power Dissipation (Max) 320mW (Ta) 290mW (Ta) 320mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-523 SOT-523 SOT-523
Package / Case SOT-523 SOT-523 SOT-523

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