Diodes Incorporated-DMN26D0UFB4-7 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Rds On (Max) @ Id, Vgs:	3Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id:	1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	±10V
Input Capacitance (Ciss) (Max) @ Vds:	14.1 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	350mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	X2-DFN1006-3
Package / Case:	3-XFDFN

Diodes Incorporated DMN26D0UFB4-7