DMN2600UFB-7
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Diodes Incorporated DMN2600UFB-7

Manufacturer No:
DMN2600UFB-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2600UFB-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 25V 1.3A 3DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:350mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.85 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:70.13 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):540mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:X1-DFN1006-3
Package / Case:3-UFDFN
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Similar Products

Part Number DMN2600UFB-7 DMN2400UFB-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 20 V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta) 750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 350mOhm @ 200mA, 4.5V 550mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.85 nC @ 4.5 V 0.5 nC @ 4.5 V
Vgs (Max) ±8V ±12V
Input Capacitance (Ciss) (Max) @ Vds 70.13 pF @ 15 V 36 pF @ 16 V
FET Feature - -
Power Dissipation (Max) 540mW (Ta) 470mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package X1-DFN1006-3 X1-DFN1006-3
Package / Case 3-UFDFN 3-UFDFN

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