DMN2550UFA-7B
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Diodes Incorporated DMN2550UFA-7B

Manufacturer No:
DMN2550UFA-7B
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2550UFA-7B Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 600MA 3DFN
Delivery:
Payment:
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iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:450mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.88 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:52.5 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:X2-DFN0806-3
Package / Case:3-XFDFN
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Similar Products

Part Number DMN2550UFA-7B DMN25D0UFA-7B  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 25 V
Current - Continuous Drain (Id) @ 25°C 600mA (Ta) 240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 2.7V, 4.5V
Rds On (Max) @ Id, Vgs 450mOhm @ 200mA, 4.5V 4Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.88 nC @ 4.5 V 0.36 nC @ 4.5 V
Vgs (Max) ±8V 8V
Input Capacitance (Ciss) (Max) @ Vds 52.5 pF @ 16 V 27.9 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 360mW (Ta) 280mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package X2-DFN0806-3 X2-DFN0806-3
Package / Case 3-XFDFN 3-XFDFN

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