DMN2501UFB4-7
  • Share:

Diodes Incorporated DMN2501UFB4-7

Manufacturer No:
DMN2501UFB4-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2501UFB4-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 1A X2-DFN1006-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2 nC @ 10 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:82 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:X2-DFN1006-3
Package / Case:3-XFDFN
0 Remaining View Similar

In Stock

$0.10
2,012

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN2501UFB4-7 DMN2500UFB4-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta) 810mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 400mOhm @ 600mA, 4.5V 400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2 nC @ 10 V 0.74 nC @ 4.5 V
Vgs (Max) ±8V ±6V
Input Capacitance (Ciss) (Max) @ Vds 82 pF @ 16 V 60.67 pF @ 16 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 460mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package X2-DFN1006-3 X2-DFN1006-3
Package / Case 3-XFDFN 3-XFDFN

Related Product By Categories

BSS169H6327XTSA1
BSS169H6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 170MA SOT23-3
BSC883N03MSG
BSC883N03MSG
Infineon Technologies
N-CHANNEL POWER MOSFET
DMTH8003SPS-13
DMTH8003SPS-13
Diodes Incorporated
MOSFET N-CH 80V 100A PWRDI5060-8
AOB1608L
AOB1608L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 60V 11A/140A TO263
IRF7463
IRF7463
Infineon Technologies
MOSFET N-CH 30V 14A 8SO
IRL540NSTRR
IRL540NSTRR
Infineon Technologies
MOSFET N-CH 100V 36A D2PAK
STB11NM60-1
STB11NM60-1
STMicroelectronics
MOSFET N-CH 650V 11A I2PAK
IXTP88N085T
IXTP88N085T
IXYS
MOSFET N-CH 85V 88A TO220AB
IRF6798MTR1PBF
IRF6798MTR1PBF
Infineon Technologies
MOSFET N-CH 25V 37A DIRECTFET
SI4470EY-T1-GE3
SI4470EY-T1-GE3
Vishay Siliconix
MOSFET N-CH 60V 9A 8SO
NTMFS4965NFT3G
NTMFS4965NFT3G
onsemi
MOSFET N-CH 30V 17.5A/65A 5DFN
TSM2301CX RFG
TSM2301CX RFG
Taiwan Semiconductor Corporation
MOSFET P-CHANNEL 20V 2.8A SOT23

Related Product By Brand

FW3740009
FW3740009
Diodes Incorporated
CRYSTAL 37.4000MHZ 11PF SMD
FY2500102
FY2500102
Diodes Incorporated
CRYSTAL 25.0000MHZ 15PF SMD
S1613B-60.0000(T)
S1613B-60.0000(T)
Diodes Incorporated
XTAL OSC XO 60.0000MHZ LVCMOS
FN5000136Q
FN5000136Q
Diodes Incorporated
XTAL OSC XO 50.0000MHZ CMOS
DFLZ8V2-7
DFLZ8V2-7
Diodes Incorporated
DIODE ZENER 8.2V 1W POWERDI123
PD3Z284C6V8-7
PD3Z284C6V8-7
Diodes Incorporated
DIODE ZENER 6.8V POWERDI323
ZDT619TC
ZDT619TC
Diodes Incorporated
TRANS 2NPN 50V 2A SM8
PI49FCT807BTSE
PI49FCT807BTSE
Diodes Incorporated
IC CLK BUFFER 1:10 80MHZ 20SOIC
AL3644TTCH12-7
AL3644TTCH12-7
Diodes Incorporated
IC LED DRVR RGLTR I2C U-WLB1713
AL8807MP-13
AL8807MP-13
Diodes Incorporated
IC LED DRVR RGLTR PWM 1.3A 8MSOP
AP1501-33T5G-U
AP1501-33T5G-U
Diodes Incorporated
IC REG BUCK 3A TO220-5
AP7354D-25FS4-7
AP7354D-25FS4-7
Diodes Incorporated
IC REG LINEAR 2.5V 150MA 4DFN