DMN2501UFB4-7
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Diodes Incorporated DMN2501UFB4-7

Manufacturer No:
DMN2501UFB4-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2501UFB4-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 1A X2-DFN1006-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2 nC @ 10 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:82 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:X2-DFN1006-3
Package / Case:3-XFDFN
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Similar Products

Part Number DMN2501UFB4-7 DMN2500UFB4-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta) 810mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 400mOhm @ 600mA, 4.5V 400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2 nC @ 10 V 0.74 nC @ 4.5 V
Vgs (Max) ±8V ±6V
Input Capacitance (Ciss) (Max) @ Vds 82 pF @ 16 V 60.67 pF @ 16 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 460mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package X2-DFN1006-3 X2-DFN1006-3
Package / Case 3-XFDFN 3-XFDFN

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