DMN2320UFB4-7B
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Diodes Incorporated DMN2320UFB4-7B

Manufacturer No:
DMN2320UFB4-7B
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2320UFB4-7B Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 1A X2-DFN1006-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:320mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.89 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:71 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):520mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:X2-DFN1006-3
Package / Case:3-XFDFN
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Similar Products

Part Number DMN2320UFB4-7B DMN2300UFB4-7B  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta) 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 320mOhm @ 500mA, 4.5V 175mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.89 nC @ 4.5 V 1.6 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 71 pF @ 10 V 64.3 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 520mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package X2-DFN1006-3 X2-DFN1006-3
Package / Case 3-XFDFN 3-XFDFN

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