DMN2310U-7
  • Share:

Diodes Incorporated DMN2310U-7

Manufacturer No:
DMN2310U-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2310U-7 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 8V~24V SOT23 T&R 3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:175mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.7 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:38 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):480mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.04
10,557

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN2310U-7 DMN2310UT-7   DMN2300U-7  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta) 1.2A (Ta) 1.24A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 175mOhm @ 300mA, 4.5V 240mOhm @ 300mA, 4.5V 175mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA 950mV @ 250µA 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.7 nC @ 4.5 V 0.7 nC @ 4.5 V 1.6 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 38 pF @ 10 V 38 pF @ 10 V 64.3 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 480mW (Ta) 290mW (Ta) 430mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-523 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 SOT-523 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

H5N2007FN-E
H5N2007FN-E
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
BUK662R5-30C,118
BUK662R5-30C,118
NXP Semiconductors
NEXPERIA BUK662R5-30C - 100A, 30
NTR3A052PZT1G
NTR3A052PZT1G
onsemi
MOSFET P-CH 20V 3.6A SOT23
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
BSP373L6327
BSP373L6327
Infineon Technologies
N-CHANNEL POWER MOSFET
BSP297L6327
BSP297L6327
Infineon Technologies
SMALL-SIGNAL N-CHANNEL MOSFET
TW140N120C,S1F
TW140N120C,S1F
Toshiba Semiconductor and Storage
G3 1200V SIC-MOSFET TO-247 140M
BUK7109-75ATE,118
BUK7109-75ATE,118
Nexperia USA Inc.
MOSFET N-CH 75V 75A SOT426
IRFR9024TRL
IRFR9024TRL
Vishay Siliconix
MOSFET P-CH 60V 8.8A DPAK
BSP88L6327HTSA1
BSP88L6327HTSA1
Infineon Technologies
MOSFET N-CH 240V 350MA SOT223-4
BSC094N03S G
BSC094N03S G
Infineon Technologies
MOSFET N-CH 30V 14.6A/35A TDSON
VN2410LZL1G
VN2410LZL1G
onsemi
MOSFET N-CH 240V 200MA TO92-3

Related Product By Brand

DESD24VF1BLP3-7
DESD24VF1BLP3-7
Diodes Incorporated
TVS DIODE 24VWM 23VC DFN0603-2
DFLT28A-7
DFLT28A-7
Diodes Incorporated
TVS DIODE 28VWM 45.4VC PWRDI 123
3.0SMCJ12A-13
3.0SMCJ12A-13
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR SMC
F94800031
F94800031
Diodes Incorporated
CRYSTAL 48.0000MHZ 12PF
FN3710001
FN3710001
Diodes Incorporated
XTAL OSC XO 37.1250MHZ CMOS SMD
ZTX415STOA
ZTX415STOA
Diodes Incorporated
TRANS NPN 100V 0.5A E-LINE
DMN6070SSDQ-13
DMN6070SSDQ-13
Diodes Incorporated
MOSFET BVDSS: 41V~60V SO-8 T&R 2
PI3G612ZHEX
PI3G612ZHEX
Diodes Incorporated
IC MUX/DEMUX 6CH 1:2 28TQFN
APX809S05-23SR-7
APX809S05-23SR-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23
AP7354-28FS4-7
AP7354-28FS4-7
Diodes Incorporated
IC REG LINEAR 2.8V 150MA 4DFN
AP7342D-1818FS6-7
AP7342D-1818FS6-7
Diodes Incorporated
IC REG LIN 1.8V/1.8V X2DFN1212-6
AP7344D-2833RH4-7
AP7344D-2833RH4-7
Diodes Incorporated
IC REG LIN 2.8V/3.3V X2DFN1612-8