DMN2300UFD-7
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Diodes Incorporated DMN2300UFD-7

Manufacturer No:
DMN2300UFD-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2300UFD-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 1.21A 3DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.21A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:200mOhm @ 900mA, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:67.62 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):470mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:X1-DFN1212-3
Package / Case:3-UDFN
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Similar Products

Part Number DMN2300UFD-7 DMN2400UFD-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 1.21A (Ta) 900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 200mOhm @ 900mA, 4.5V 600mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2 nC @ 4.5 V 500 nC @ 4.5 V
Vgs (Max) ±8V ±12V
Input Capacitance (Ciss) (Max) @ Vds 67.62 pF @ 25 V 37 pF @ 16 V
FET Feature - -
Power Dissipation (Max) 470mW (Ta) 400mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package X1-DFN1212-3 X1-DFN1212-3
Package / Case 3-UDFN 3-UDFN

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