DMN2300UFB4-7B
  • Share:

Diodes Incorporated DMN2300UFB4-7B

Manufacturer No:
DMN2300UFB4-7B
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2300UFB4-7B Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 1.3A 3DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:175mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id:950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.6 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:64.3 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:X2-DFN1006-3
Package / Case:3-XFDFN
0 Remaining View Similar

In Stock

$0.47
922

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN2300UFB4-7B DMN2320UFB4-7B   DMN2300UFB-7B  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta) 1A (Ta) 1.32A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 175mOhm @ 300mA, 4.5V 320mOhm @ 500mA, 4.5V 175mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA 950mV @ 250µA 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.6 nC @ 4.5 V 0.89 nC @ 4.5 V 0.89 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 64.3 pF @ 25 V 71 pF @ 10 V 67.62 pF @ 20 V
FET Feature - - -
Power Dissipation (Max) 500mW (Ta) 520mW (Ta) 468mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package X2-DFN1006-3 X2-DFN1006-3 X1-DFN1006-3
Package / Case 3-XFDFN 3-XFDFN 3-UFDFN

Related Product By Categories

SSM3K72CFS,LF
SSM3K72CFS,LF
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 170MA SSM
FCH072N60
FCH072N60
onsemi
MOSFET N-CH 600V 52A TO247-3
RJK0368DPA-00#J0
RJK0368DPA-00#J0
Renesas Electronics America Inc
MOSFET N-CH 30V 20A 8WPAK
BUK6D77-60EX
BUK6D77-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 3.4A/10.6A 6DFN
TPN7R504PL,LQ
TPN7R504PL,LQ
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 38A 8TSON
STF13N60DM2
STF13N60DM2
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
NTMTSC1D6N10MCTXG
NTMTSC1D6N10MCTXG
onsemi
MOSFET N-CH 100V 35A/267A 8TDFNW
IXTA05N100
IXTA05N100
IXYS
MOSFET N-CH 1000V 750MA TO263
IRF8113
IRF8113
Infineon Technologies
MOSFET N-CH 30V 17.2A 8SO
IXFH60N20
IXFH60N20
IXYS
MOSFET N-CH 200V 60A TO247AD
SI4890BDY-T1-E3
SI4890BDY-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 16A 8SO
AOB20C60PL
AOB20C60PL
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 20A TO263

Related Product By Brand

D15V0X1B2LP-7B
D15V0X1B2LP-7B
Diodes Incorporated
TVS DIODE 15VWM 30VC DFN1006-2
FW2500025Z
FW2500025Z
Diodes Incorporated
CRYSTAL 25.0000MHZ 20PF SMD
FK8000005Z
FK8000005Z
Diodes Incorporated
XTAL OSC XO 80.0000MHZ CMOS SMD
PR1001GL-T
PR1001GL-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
SBL535
SBL535
Diodes Incorporated
DIODE SCHOTTKY 35V 5A TO220AC
BZX84C16-7-F-31
BZX84C16-7-F-31
Diodes Incorporated
DIODE ZENER 16V 300MW SOT23
DXT696BK-13
DXT696BK-13
Diodes Incorporated
TRANS NPN 180V 0.5A TO252-3
DDTC115TKA-7-F
DDTC115TKA-7-F
Diodes Incorporated
TRANS PREBIAS NPN 200MW SC59
74AUP1G126FW5-7
74AUP1G126FW5-7
Diodes Incorporated
IC BUFFER NON-INVERT 3.6V 6DFN
PI74LPT16245AV
PI74LPT16245AV
Diodes Incorporated
IC TXRX NON-INVERT 3.6V 48SSOP
AP22817AKBWT-7
AP22817AKBWT-7
Diodes Incorporated
USBPOWERSWITCHTSOT25T&R3K
AP7384-33SA-7
AP7384-33SA-7
Diodes Incorporated
IC REG LIN 3.3V SOT23 T&R 3K