DMN2230U-7
  • Share:

Diodes Incorporated DMN2230U-7

Manufacturer No:
DMN2230U-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2230U-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 2A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:110mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:188 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):600mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.49
1,331

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN2230U-7 DMN2230UQ-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta) 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 110mOhm @ 2.5A, 4.5V 110mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 2.3 nC @ 10 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 188 pF @ 10 V 188 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 600mW (Ta) 600mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

SI4430BDY-T1-E3
SI4430BDY-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 14A 8SO
3N163 SOT-143 4L
3N163 SOT-143 4L
Linear Integrated Systems, Inc.
P-CHANNEL, SINGLE ENHANCEMENT MO
PJA3409_R1_00001
PJA3409_R1_00001
Panjit International Inc.
SOT-23, MOSFET
TPH2R306NH1,LQ
TPH2R306NH1,LQ
Toshiba Semiconductor and Storage
UMOS9 SOP-ADV(N) PD=170W F=1MHZ
IPD60R1K0PFD7SAUMA1
IPD60R1K0PFD7SAUMA1
Infineon Technologies
CONSUMER PG-TO252-3
RM6N800T2
RM6N800T2
Rectron USA
MOSFET N-CHANNEL 800V 6A TO220-3
NVMFS6H836NT3G
NVMFS6H836NT3G
onsemi
T8 80V SO8FL
FDMC7664
FDMC7664
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
IRLR3715ZTRL
IRLR3715ZTRL
Infineon Technologies
MOSFET N-CH 20V 49A DPAK
BSC094N03S G
BSC094N03S G
Infineon Technologies
MOSFET N-CH 30V 14.6A/35A TDSON
SPD15N06S2L-64
SPD15N06S2L-64
Infineon Technologies
MOSFET N-CH 55V 19A TO252-3
2SK4087LS-1E
2SK4087LS-1E
onsemi
MOSFET N-CH 600V 9.2A TO220F-3FS

Related Product By Brand

D5V0L2B3T-7
D5V0L2B3T-7
Diodes Incorporated
TVS DIODE 5VWM 14VC SOT523
SBR20A40CTFP-JT
SBR20A40CTFP-JT
Diodes Incorporated
DIODE ARRAY SCHOTTKY
1N4148-T
1N4148-T
Diodes Incorporated
DIODE GEN PURP 75V 150MA DO35
UF5A400D1-13
UF5A400D1-13
Diodes Incorporated
DIODE GEN PURP 400V 5A TO252-3
PD3Z284C33-7
PD3Z284C33-7
Diodes Incorporated
DIODE ZENER 33V 500MW POWERDI323
MMSZ5252B-7
MMSZ5252B-7
Diodes Incorporated
DIODE ZENER 24V 500MW SOD123
DDZ9694Q-13
DDZ9694Q-13
Diodes Incorporated
DIODE ZENER 8.2V 500MW SOD123
DMP2004KQ-7
DMP2004KQ-7
Diodes Incorporated
DIODE
APX803L40-41SA-7
APX803L40-41SA-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23
APX803S00-46SA-7
APX803S00-46SA-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23
PT7M823LSE-7
PT7M823LSE-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT353
AP7366-36W5-7
AP7366-36W5-7
Diodes Incorporated
LDO CMOS HICURR SOT25 T&R 3K