DMN21D2UFB-7B
  • Share:

Diodes Incorporated DMN21D2UFB-7B

Manufacturer No:
DMN21D2UFB-7B
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN21D2UFB-7B Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 760MA 3DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:760mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.93 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:27.6 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):380mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:X1-DFN1006-3
Package / Case:3-UFDFN
0 Remaining View Similar

In Stock

$0.40
908

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN21D2UFB-7B DMN21D2UFB-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 760mA (Ta) 760mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 990mOhm @ 100mA, 4.5V 990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.93 nC @ 10 V 0.93 nC @ 10 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 27.6 pF @ 16 V 27.6 pF @ 16 V
FET Feature - -
Power Dissipation (Max) 380mW (Ta) 380mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package X1-DFN1006-3 X1-DFN1006-3
Package / Case 3-UFDFN 3-UFDFN

Related Product By Categories

UPA2790GR-E2-A
UPA2790GR-E2-A
Renesas Electronics America Inc
P-CHANNEL POWER MOSFET
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
SI4447DY-T1-GE3
SI4447DY-T1-GE3
Vishay Siliconix
MOSFET P-CH 40V 3.3A 8SO
SQSA12CENW-T1_GE3
SQSA12CENW-T1_GE3
Vishay Siliconix
AUTOMOTIVE N-CHANNEL 100 V (D-S)
IRF5803TR
IRF5803TR
Infineon Technologies
MOSFET P-CH 40V 3.4A MICRO6
FQD13N06TF
FQD13N06TF
onsemi
MOSFET N-CH 60V 10A DPAK
IPB12CN10N G
IPB12CN10N G
Infineon Technologies
MOSFET N-CH 100V 67A D2PAK
SI7860DP-T1-GE3
SI7860DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 11A PPAK SO-8
AON7202
AON7202
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 20A/40A 8DFN
IRF7749L2TRPBF
IRF7749L2TRPBF
Infineon Technologies
MOSFET N-CH 60V 33A DIRECTFET
AUIRF3205ZSTRL
AUIRF3205ZSTRL
Infineon Technologies
MOSFET N-CH 55V 75A D2PAK
APT130SM70J
APT130SM70J
Microsemi Corporation
SICFET N-CH 700V 78A SOT227

Related Product By Brand

3.0SMCJ9.0A-13
3.0SMCJ9.0A-13
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR SMC
SMAJ10A-13
SMAJ10A-13
Diodes Incorporated
TVS DIODE 10VWM 17VC SMA
P6KE9V1CA-T
P6KE9V1CA-T
Diodes Incorporated
TVS DIODE 7.78VWM 13.4VC DO15
FL0800009Q
FL0800009Q
Diodes Incorporated
CRYSTAL 8.0000MHZ 8PF SMD
DSRHD08-13
DSRHD08-13
Diodes Incorporated
BRIDGE RECT 1P 800V 1A T-MINIDIP
SBR30A45CTB-13
SBR30A45CTB-13
Diodes Incorporated
DIODE ARRAY SBR 45V 15A TO263
B140HWQ-7
B140HWQ-7
Diodes Incorporated
DIODE SCHOTTKY 40V 1A SOD123
PI7C9X110BNBE
PI7C9X110BNBE
Diodes Incorporated
IC INTFACE SPECIALIZED 160LFBGA
74LVC1G32FS3-7
74LVC1G32FS3-7
Diodes Incorporated
IC GATE OR 1CH 2-INP DFN0808-4
APX803L-31SA-7
APX803L-31SA-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23
AP7330-W5-7
AP7330-W5-7
Diodes Incorporated
IC REG LIN POS ADJ 300MA SOT25
AP1117D18G-13
AP1117D18G-13
Diodes Incorporated
IC REG LINEAR 1.8V 1A TO252-3