DMN21D2UFB-7
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Diodes Incorporated DMN21D2UFB-7

Manufacturer No:
DMN21D2UFB-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN21D2UFB-7 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 8V~24V X1-DFN1006-
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:760mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.93 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:27.6 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):380mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:X1-DFN1006-3
Package / Case:3-UFDFN
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Similar Products

Part Number DMN21D2UFB-7 DMN21D2UFB-7B  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 760mA (Ta) 760mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 990mOhm @ 100mA, 4.5V 990mOhm @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.93 nC @ 10 V 0.93 nC @ 10 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 27.6 pF @ 16 V 27.6 pF @ 16 V
FET Feature - -
Power Dissipation (Max) 380mW (Ta) 380mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package X1-DFN1006-3 X1-DFN1006-3
Package / Case 3-UFDFN 3-UFDFN

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