DMN2112SN-7
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Diodes Incorporated DMN2112SN-7

Manufacturer No:
DMN2112SN-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2112SN-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 1.2A SC59-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:100mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:220 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-59-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number DMN2112SN-7 DMN2114SN-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 1.2A (Ta) 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 100mOhm @ 500mA, 4.5V 100mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 1mA 1.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±8V ±12V
Input Capacitance (Ciss) (Max) @ Vds 220 pF @ 10 V 180 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SC-59-3 SC-59-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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