DMN2075U-7
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Diodes Incorporated DMN2075U-7

Manufacturer No:
DMN2075U-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2075U-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 4.2A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:38mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:594.3 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):800mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number DMN2075U-7 DMN2055U-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta) 4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 38mOhm @ 3.6A, 4.5V 38mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 4.5 V 4.3 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 594.3 pF @ 10 V 400 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 800mW (Ta) 800mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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