DMN2058UW-13
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Diodes Incorporated DMN2058UW-13

Manufacturer No:
DMN2058UW-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2058UW-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 3.5A SOT323 T&R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 10V
Rds On (Max) @ Id, Vgs:42mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.7 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:281 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
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Similar Products

Part Number DMN2058UW-13 DMN2058U-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) 4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 10V 1.8V, 10V
Rds On (Max) @ Id, Vgs 42mOhm @ 3A, 10V 35mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.7 nC @ 10 V 7.7 nC @ 10 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 281 pF @ 10 V 281 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 1.13W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-23-3
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

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