Diodes Incorporated-DMN2050LFDB-13 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	3.3A
Rds On (Max) @ Id, Vgs:	45mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	389pF @ 10V
Power - Max:	730mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-UDFN Exposed Pad
Supplier Device Package:	U-DFN2020-6 (Type B)

Diodes Incorporated DMN2050LFDB-13