DMN2040U-13
  • Share:

Diodes Incorporated DMN2040U-13

Manufacturer No:
DMN2040U-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2040U-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 6A SOT23 T&R 1
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:25mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:667 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):800mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.08
6,507

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN2040U-13 DMN2046U-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 6A (Ta) 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 25mOhm @ 8.2A, 4.5V 72mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 4.5 V 3.8 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 667 pF @ 10 V 292 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 800mW (Ta) 760mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

TK16J60W5,S1VQ
TK16J60W5,S1VQ
Toshiba Semiconductor and Storage
X35 PB-F POWER MOSFET TRANSISTOR
SCT040H65G3AG
SCT040H65G3AG
STMicroelectronics
AUTOMOTIVE-GRADE SILICON CARBIDE
NTH4L040N120SC1
NTH4L040N120SC1
onsemi
SICFET N-CH 1200V 58A TO247-4
SI2343CDS-T1-BE3
SI2343CDS-T1-BE3
Vishay Siliconix
P-CHANNEL 30-V (D-S) MOSFET
IRFR4105TRLPBF
IRFR4105TRLPBF
Infineon Technologies
MOSFET N-CH 55V 27A DPAK
AOL1240
AOL1240
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 40V 19A/69A ULTRASO8
IXFP14N60P
IXFP14N60P
IXYS
MOSFET N-CH 600V 14A TO220AB
APT50M75B2LLG
APT50M75B2LLG
Microchip Technology
MOSFET N-CH 500V 57A T-MAX
PHD36N03LT,118
PHD36N03LT,118
NXP USA Inc.
MOSFET N-CH 30V 43.4A DPAK
NTP52N10G
NTP52N10G
onsemi
MOSFET N-CH 100V 60A TO220AB
STD90N02L
STD90N02L
STMicroelectronics
MOSFET N-CH 25V 60A DPAK
SUD40N02-3M3P-E3
SUD40N02-3M3P-E3
Vishay Siliconix
MOSFET N-CH 20V 24.4A/40A TO252

Related Product By Brand

FY2500107
FY2500107
Diodes Incorporated
CRYSTAL 25.0000MHZ 18PF SMD
HX21C5006Z
HX21C5006Z
Diodes Incorporated
CRYSTAL OSCILLATOR SEAM2520 T&R
HX7013D0100.000000
HX7013D0100.000000
Diodes Incorporated
XTAL OSC XO 100.0000MHZ CMOS SMD
SBR30U30CT
SBR30U30CT
Diodes Incorporated
DIODE ARRAY SBR 30V 15A TO220AB
DSR8V600
DSR8V600
Diodes Incorporated
DIODE GEN PURP 600V 8A TO220AC
DDTD123TC-7-F
DDTD123TC-7-F
Diodes Incorporated
TRANS PREBIAS NPN 200MW SOT23-3
DDTA144WKA-7-F
DDTA144WKA-7-F
Diodes Incorporated
TRANS PREBIAS PNP 200MW SC59-3
DDTC114EUA-7
DDTC114EUA-7
Diodes Incorporated
TRANS PREBIAS NPN 200MW SOT323
AP4310AMTR-AG1
AP4310AMTR-AG1
Diodes Incorporated
IC OPAMP GP 2 CIRCUIT 8SO
PI4ULS5V104GAEX
PI4ULS5V104GAEX
Diodes Incorporated
IC TRNSLTR BIDIRECTIONAL 12CSP
AP9101CK6-ACTRG1
AP9101CK6-ACTRG1
Diodes Incorporated
IC BATT PROT LI-ION 1CELL SOT26
AP34063S8G-13
AP34063S8G-13
Diodes Incorporated
IC REG BUCK BST ADJ 1.6A 8SOP