DMN2040U-13
  • Share:

Diodes Incorporated DMN2040U-13

Manufacturer No:
DMN2040U-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2040U-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 6A SOT23 T&R 1
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:25mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:667 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):800mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.08
6,507

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN2040U-13 DMN2046U-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 6A (Ta) 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 25mOhm @ 8.2A, 4.5V 72mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 4.5 V 3.8 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 667 pF @ 10 V 292 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 800mW (Ta) 760mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

IRF624SPBF
IRF624SPBF
Vishay Siliconix
MOSFET N-CH 250V 4.4A D2PAK
TSM085P03CV RGG
TSM085P03CV RGG
Taiwan Semiconductor Corporation
MOSFET P-CH 30V 64A 8PDFN
STW50N65DM6
STW50N65DM6
STMicroelectronics
MOSFET N-CH 650V 33A TO247-3
PMZ290UNE315
PMZ290UNE315
NXP USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
NVTFWS003N04CTAG
NVTFWS003N04CTAG
onsemi
MOSFET N-CH 40V 22A/103A 8WDFN
STF9HN65M2
STF9HN65M2
STMicroelectronics
MOSFET N-CH 650V 5.5A TO220FP
IPP65R065C7
IPP65R065C7
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR, 3
STP5NK40Z
STP5NK40Z
STMicroelectronics
MOSFET N-CH 400V 3A TO220AB
IXTQ180N055T
IXTQ180N055T
IXYS
MOSFET N-CH 55V 180A TO3P
2SK2845(TE16L1,Q)
2SK2845(TE16L1,Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 900V 1A DP
TK14C65W,S1Q
TK14C65W,S1Q
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 13.7A I2PAK
STB6N65M2
STB6N65M2
STMicroelectronics
MOSFET N-CH 650V 4A D2PAK

Related Product By Brand

P6KE6V8CA-B
P6KE6V8CA-B
Diodes Incorporated
TVS DIODE 5.8VWM 10.5VC DO15
TB2300L-13-F
TB2300L-13-F
Diodes Incorporated
THYRISTOR 190V 150A DO214AA
G43270021
G43270021
Diodes Incorporated
CRYSTAL 32.7680KHZ 12.5PF SMD
FD0670003
FD0670003
Diodes Incorporated
XTAL OSC XO 6.7584MHZ CMOS SMD
SK35-7
SK35-7
Diodes Incorporated
DIODE SCHOTTKY 50V 3A SMC
DDZ3V3BSF-7
DDZ3V3BSF-7
Diodes Incorporated
DIODE ZENER 3.43V 500MW SOD323F
ZXTP08400BFFTA
ZXTP08400BFFTA
Diodes Incorporated
TRANS PNP 400V 0.2A SOT23F
DMJ70H601SK3-13
DMJ70H601SK3-13
Diodes Incorporated
MOSFET N-CHANNEL 700V 8A TO252
AH5795-FDC-7
AH5795-FDC-7
Diodes Incorporated
IC MOTOR DRIVER PWM 6DFN
PT8A3244PEX
PT8A3244PEX
Diodes Incorporated
HEATER CONTROLLER DIP-8
APX803L-46W5-7
APX803L-46W5-7
Diodes Incorporated
RESET GENERATOR SOT25 T&R 3K
AUR9713AGH
AUR9713AGH
Diodes Incorporated
IC REG BUCK ADJ 1A TSOT23-5