DMN2029UVT-7
  • Share:

Diodes Incorporated DMN2029UVT-7

Manufacturer No:
DMN2029UVT-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2029UVT-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 6.8A TSOT26
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:24mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TSOT-26
Package / Case:SOT-23-6 Thin, TSOT-23-6
0 Remaining View Similar

In Stock

$0.12
3,581

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN2029UVT-7 DMN2026UVT-7   DMN2028UVT-7  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 6.8A (Ta) 6.2A (Tc) 6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 24mOhm @ 6.2A, 4.5V 24mOhm @ 6.2A, 4.5V 24mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 18.4 nC @ 8 V 8.3 nC @ 4.5 V
Vgs (Max) - ±10V ±8V
Input Capacitance (Ciss) (Max) @ Vds - 887 pF @ 10 V 856 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) - 1.15W (Ta) 1.2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TSOT-26 TSOT-26 TSOT-23-6
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

Related Product By Categories

2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
NVMFSC0D9N04CL
NVMFSC0D9N04CL
onsemi
MOSFET N-CH 40V 50A/316A 8DFN
IPU60R2K1CEAKMA1
IPU60R2K1CEAKMA1
Infineon Technologies
CONSUMER
STP410N4F7AG
STP410N4F7AG
STMicroelectronics
MOSFET N-CHANNEL 40V 180A TO220
IXFN32N120
IXFN32N120
IXYS
MOSFET N-CH 1200V 32A SOT-227B
IRFR4105TR
IRFR4105TR
Infineon Technologies
MOSFET N-CH 55V 27A DPAK
IRFR9214TR
IRFR9214TR
Vishay Siliconix
MOSFET P-CH 250V 2.7A DPAK
RFP30P05
RFP30P05
onsemi
MOSFET P-CH 50V 30A TO220-3
2SK4087LS
2SK4087LS
onsemi
MOSFET N-CH 600V 9.2A TO220FI
SPP15P10PHXKSA1
SPP15P10PHXKSA1
Infineon Technologies
MOSFET P-CH 100V 15A TO220-3
TP65H070LSG
TP65H070LSG
Transphorm
GANFET N-CH 650V 25A 3PQFN
NVTFS4823NTWG
NVTFS4823NTWG
onsemi
MOSFET N-CH 30V 13A 8WDFN

Related Product By Brand

GC3200013
GC3200013
Diodes Incorporated
CRYSTAL 32.0000MHZ 18PF
FL2400091
FL2400091
Diodes Incorporated
CRYSTAL 24.0000MHZ 8PF SMD
FX2000045
FX2000045
Diodes Incorporated
CRYSTAL SURFACE MOUNT
FD2700042
FD2700042
Diodes Incorporated
XTAL OSC XO 27.0000MHZ CMOS SMD
BZX84C3V9Q-7-F
BZX84C3V9Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
ZXMN2A14FTA
ZXMN2A14FTA
Diodes Incorporated
MOSFET N-CH 20V 3.4A SOT23-3
AP9214LA-AE-HSBR-7
AP9214LA-AE-HSBR-7
Diodes Incorporated
IC BATT PROT LI-ION 1CELL 6UDFN
AP2182AMPG-13
AP2182AMPG-13
Diodes Incorporated
IC PWR SWITCH P-CHAN 1:2 8MSOP
PT8A3234WEX
PT8A3234WEX
Diodes Incorporated
HEATER CONTROLLER SO-8
AP64202QSP-13
AP64202QSP-13
Diodes Incorporated
DCDC CONV HV BUCK SO-8EP T&R 4K
AP1501-33K5G-U
AP1501-33K5G-U
Diodes Incorporated
IC REG BUCK 3A TO263-5
AP2210N-2.8TRE1
AP2210N-2.8TRE1
Diodes Incorporated
IC REG LINEAR 2.8V 300MA SOT23-3