DMN2029UVT-13
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Diodes Incorporated DMN2029UVT-13

Manufacturer No:
DMN2029UVT-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2029UVT-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 6.8A TSOT26
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:24mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TSOT-26
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Similar Products

Part Number DMN2029UVT-13 DMN2026UVT-13   DMN2028UVT-13  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 6.8A (Ta) 6.2A (Tc) 6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 24mOhm @ 6.2A, 4.5V 24mOhm @ 6.2A, 4.5V 24mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 18.4 nC @ 8 V 8.3 nC @ 4.5 V
Vgs (Max) - ±10V ±8V
Input Capacitance (Ciss) (Max) @ Vds - 887 pF @ 10 V 856 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) - 1.15W (Ta) 1.2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TSOT-26 TSOT-23-6 TSOT-23-6
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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