Diodes Incorporated-DMN2029USD-13 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	5.8A
Rds On (Max) @ Id, Vgs:	25mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	18.6nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds:	1171pF @ 10V
Power - Max:	1.2W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

Diodes Incorporated DMN2029USD-13