DMN2024U-7
  • Share:

Diodes Incorporated DMN2024U-7

Manufacturer No:
DMN2024U-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2024U-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 6.8A SOT23 T&R 3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:25mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.1 nC @ 4.5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:647 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):800mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.11
3,823

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN2024U-7 DMN2024UQ-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 6.8A (Ta) 6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 25mOhm @ 6.5A, 4.5V 25mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.1 nC @ 4.5 V 6.5 nC @ 4.5 V
Vgs (Max) ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 647 pF @ 10 V 647 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 800mW 800mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

FQB7N30TM
FQB7N30TM
Fairchild Semiconductor
MOSFET N-CH 300V 7A D2PAK
PJQ2405_R1_00001
PJQ2405_R1_00001
Panjit International Inc.
20V P-CHANNEL ENHANCEMENT MODE M
IRFIBE30GPBF
IRFIBE30GPBF
Vishay Siliconix
MOSFET N-CH 800V 2.1A TO220-3
SSM3K59CTB,L3F
SSM3K59CTB,L3F
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 2A CST3B
IPB057N06NATMA1
IPB057N06NATMA1
Infineon Technologies
MOSFET N-CH 60V 17A/45A D2PAK
AON7240
AON7240
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 40V 19A/40A 8DFN
BSO052N03S
BSO052N03S
Infineon Technologies
MOSFET N-CH 30V 14A 8DSO
IPW90R340C3FKSA1
IPW90R340C3FKSA1
Infineon Technologies
MOSFET N-CH 900V 15A TO247-3
IPP120N04S401AKSA1
IPP120N04S401AKSA1
Infineon Technologies
MOSFET N-CH 40V 120A TO220-3-1
HUF76629D3ST-F085
HUF76629D3ST-F085
onsemi
MOSFET N-CH 100V 20A TO252
DMP32D5LFA-7B
DMP32D5LFA-7B
Diodes Incorporated
MOSFET P-CH 30V 300MA 3DFN
RXR035N03TCL
RXR035N03TCL
Rohm Semiconductor
MOSFET N-CH 30V 3.5A TSMT3

Related Product By Brand

DM6W36A-13
DM6W36A-13
Diodes Incorporated
TVS DIODE 36VWM 58.1VC DO218
BAS7005TC
BAS7005TC
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT23-3
SBR40100CTFP-G
SBR40100CTFP-G
Diodes Incorporated
DIODE ARRAY SBR 100V 20A ITO220A
SBR1045D1Q-13
SBR1045D1Q-13
Diodes Incorporated
DIODE SBR 45V 10A TO252
DSR6V600D1-13
DSR6V600D1-13
Diodes Incorporated
DIODE GEN PURP 600V 6A TO252-3
DMP31D0UFB4-7B
DMP31D0UFB4-7B
Diodes Incorporated
MOSFET P-CH 30V 540MA 3DFN
ZXMN6A07FTA
ZXMN6A07FTA
Diodes Incorporated
MOSFET N-CH 60V 1.2A SOT23-3
ZXM64P035GTA
ZXM64P035GTA
Diodes Incorporated
MOSFET P-CH 35V 3.8A/5.3A SOT223
AP2162MPG-13
AP2162MPG-13
Diodes Incorporated
IC PWR SWITCH P-CHAN 1:2 8MSOP
PT8A3282PE
PT8A3282PE
Diodes Incorporated
HEATER CONTROLLER DIP-8
ZNBG4003JA16TC
ZNBG4003JA16TC
Diodes Incorporated
LNB FIXED BIAS U-QFN3030-16
APX803L20-49SA-7
APX803L20-49SA-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23