DMN2024U-7
  • Share:

Diodes Incorporated DMN2024U-7

Manufacturer No:
DMN2024U-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2024U-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 6.8A SOT23 T&R 3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:25mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.1 nC @ 4.5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:647 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):800mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.11
3,823

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN2024U-7 DMN2024UQ-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 6.8A (Ta) 6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 25mOhm @ 6.5A, 4.5V 25mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.1 nC @ 4.5 V 6.5 nC @ 4.5 V
Vgs (Max) ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 647 pF @ 10 V 647 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 800mW 800mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

HAT2279N-EL-E
HAT2279N-EL-E
Renesas Electronics America Inc
MOSFET N-CH 80V 30A 8LFPAK
IRF624PBF-BE3
IRF624PBF-BE3
Vishay Siliconix
MOSFET N-CH 250V 4.4A TO220AB
DMP2066UFDE-7
DMP2066UFDE-7
Diodes Incorporated
MOSFET P-CH 20V 6.2A 6UDFN
PMN48XP,115
PMN48XP,115
Nexperia USA Inc.
MOSFET P-CH 20V 4.1A 6TSOP
TK56A12N1,S4X
TK56A12N1,S4X
Toshiba Semiconductor and Storage
MOSFET N-CH 120V 56A TO220SIS
APT10035LFLLG
APT10035LFLLG
Microchip Technology
MOSFET N-CH 1000V 28A TO264
IXFB100N50Q3
IXFB100N50Q3
IXYS
MOSFET N-CH 500V 100A PLUS264
SPA11N60C3IN
SPA11N60C3IN
Infineon Technologies
MOSFET N-CH 650V 11A TO220-3-31
BSL307SP
BSL307SP
Infineon Technologies
MOSFET P-CH 30V 5.5A TSOP-6
FQP6N60
FQP6N60
onsemi
MOSFET N-CH 600V 6.2A TO220-3
IRFR3704ZTRLPBF
IRFR3704ZTRLPBF
Infineon Technologies
MOSFET N-CH 20V 60A DPAK
SUD40N02-08-E3
SUD40N02-08-E3
Vishay Siliconix
MOSFET N-CH 20V 40A TO252

Related Product By Brand

SMBJ7.0AQ-13-F
SMBJ7.0AQ-13-F
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR SMB
FL2400106
FL2400106
Diodes Incorporated
CRYSTAL 24.0000MHZ 20PF SMD
FD6600019
FD6600019
Diodes Incorporated
XTAL OSC XO 66.0000MHZ CMOS SMD
NX52C50001
NX52C50001
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM5032 T&
S1613E-77.7600(T)
S1613E-77.7600(T)
Diodes Incorporated
XTAL OSC XO 77.7600MHZ LVCMOS
BAS70-06T-7-F
BAS70-06T-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT523
SDM40E20LSQ-7-F
SDM40E20LSQ-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT23 T&R 3K
ZDT6753TC
ZDT6753TC
Diodes Incorporated
TRANS NPN/PNP 100V 2A SM8
DDTD122LU-7-F
DDTD122LU-7-F
Diodes Incorporated
TRANS PREBIAS NPN 200MW SOT323
ADTA144VCAQ-7
ADTA144VCAQ-7
Diodes Incorporated
PREBIAS TRANSISTOR SOT23 T&R 3K
AP1702GWG-7
AP1702GWG-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SC59-3
ZRT050GC2TC
ZRT050GC2TC
Diodes Incorporated
IC VREF SHUNT 2% SOT223